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  • Undoped and Si-doped GaSb layers grown by low pressure MOVPE have been treated in hydrogen plasma and the effect of this treatment on photoluminescent (PL) and electrical properties is presented. The hydrogenation of layers grown at Sb rich conditions results in nearly complete quenching of the PL line peaking at 896.5 meV, denoted in the literature as BE4. The origin of the BE4 line is ascribed to radiative recombination of excitons bound to a bare gallium vacancy.
  • Undoped and Si-doped GaSb layers grown by low pressure MOVPE have been treated in hydrogen plasma and the effect of this treatment on photoluminescent (PL) and electrical properties is presented. The hydrogenation of layers grown at Sb rich conditions results in nearly complete quenching of the PL line peaking at 896.5 meV, denoted in the literature as BE4. The origin of the BE4 line is ascribed to radiative recombination of excitons bound to a bare gallium vacancy. (en)
  • Čisté vrstvy GaSb a vrstvy dotované Si byly připraveny pomocí nízkotlaké MOVPE technologie. Připravené vrstvy byly pasivované ve vodíkové plasmě a byl zkoumán vliv pasivace na fotoluminiscenční (FL) a elektrické vlastnosti vrstev. Pasivace vzorků vypěstovaných v podmínkách obohacené koncentrace Sb vede k téměř úplnému utlumení FL čáry s maximem na 896.5 meV,uváděnou v literaturě jako BE4. Původ této čáry BE4 je poprvé interpretován jako zářivá rekombinace excitonů vázaných na volných vakancích galia (Ga). (cs)
Title
  • Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma
  • Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma (en)
  • Fotoluminiscenční vlastnosti epitaxních vrstev GaSb pasivovaných ve vodíkové plasmě (cs)
skos:prefLabel
  • Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma
  • Photoluminescence properties of GaSb epitaxial layers passivated in hydrogen plasma (en)
  • Fotoluminiscenční vlastnosti epitaxních vrstev GaSb pasivovaných ve vodíkové plasmě (cs)
skos:notation
  • RIV/67985882:_____/07:00089695!RIV08-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 1030;1033
http://linked.open...avai/riv/aktivita
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  • P(ME 834), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 4
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  • 441263
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  • RIV/67985882:_____/07:00089695
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  • photoluminescence; semiconductors; galvanomagnetic effects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV
  • [F13E51814E32]
http://linked.open...i/riv/nazevZdroje
  • Physica Status Solidi. A
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 204
http://linked.open...iv/tvurceVysledku
  • Gladkov, Petr
http://linked.open...n/vavai/riv/zamer
issn
  • 0031-8965
number of pages
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