About: InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection     Goto   Sponge   NotDistinct   Permalink

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Description
  • InP layers were grown by LPE on semi-insulating InP:Fe and n-type InP:Sn substrates with Ce, Pr, Tm, Tm2O3 and Yb additions to the growth melt. Layers were examined by LT photoluminescence spectroscopy, C-V and temperature dependent Hall measurements. The highest purifying effect has been found for Pr and Tm2O3, where the impurity concentration was decreased by up to three orders of magnitude. Ce and Yb were found as dominant acceptor impurities responsible for n to p type electrical conductivity change.
  • InP layers were grown by LPE on semi-insulating InP:Fe and n-type InP:Sn substrates with Ce, Pr, Tm, Tm2O3 and Yb additions to the growth melt. Layers were examined by LT photoluminescence spectroscopy, C-V and temperature dependent Hall measurements. The highest purifying effect has been found for Pr and Tm2O3, where the impurity concentration was decreased by up to three orders of magnitude. Ce and Yb were found as dominant acceptor impurities responsible for n to p type electrical conductivity change. (en)
  • Vrstvy InP byly připraveny epitaxním růstem z LPE na semi-izolačním InP:Fe a n-typu InP:Sn substrátu s přidáním Ce, Pr, Tm, Tm2O3 a Yb do růstové taveniny. Vrstvy byly charakterizovány pomocí nízkoteplotní FL spektroskopie, měřením C-V závislostí a teplotně závislého Hallova jevu. Nejčistší vrstvy byly připraveny s přidáním Pr a Tm2O3, kdy koncentrace nežádoucích příměsí klesla o 3 řády.Bylo ukázáno, že Ce a Yb vstupují do vrstev jako dominantní akceptorové příměsy odpovědné za konverzi vodivosti n-p. (cs)
Title
  • InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection
  • InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection (en)
  • InP epitaxní vrstvy typu p připravené za přítomnosti prvků vzácných zemin pro detekci radiačního záření (cs)
skos:prefLabel
  • InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection
  • InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection (en)
  • InP epitaxní vrstvy typu p připravené za přítomnosti prvků vzácných zemin pro detekci radiačního záření (cs)
skos:notation
  • RIV/67985882:_____/07:00086200!RIV08-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 1221;1226
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/06/0153), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 5
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 426798
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/07:00086200
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductors; photoluminescence; galvanomagnetic effects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • RO - Rumunsko
http://linked.open...ontrolniKodProRIV
  • [4F0C6FA92E99]
http://linked.open...i/riv/nazevZdroje
  • Journal of Optoelectronics and Advanced Materials
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 9
http://linked.open...iv/tvurceVysledku
  • Gladkov, Petr
  • Zavadil, Jiří
  • Žďánský, Karel
  • Procházková, Olga
http://linked.open...n/vavai/riv/zamer
issn
  • 1454-4164
number of pages
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