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Description
  • InP crystals were grown by the Czochralski technique with inclusion of Ta into the melt and then converted to the semi-insulating state by annealing. Temperature dependent Hall measurements were carried over the range from 300 K to 430 K and the activation energy of the impurity responsible for the semi-insulating state was determined as 0.75 eV from the conduction band edge. Radiation detectors were characterized by pulse-height spectra of alpha particles yielding an 85 % charge collection efficiency.
  • InP crystals were grown by the Czochralski technique with inclusion of Ta into the melt and then converted to the semi-insulating state by annealing. Temperature dependent Hall measurements were carried over the range from 300 K to 430 K and the activation energy of the impurity responsible for the semi-insulating state was determined as 0.75 eV from the conduction band edge. Radiation detectors were characterized by pulse-height spectra of alpha particles yielding an 85 % charge collection efficiency. (en)
  • Krystaly InP byly připraveny technikou Czochralského s přísadou Ta v tavenině a pak žíháním převedeny do semiizolačního stavu. Byla provedena teplotně závislá Hallova měření v rozsahu od 300 K do 430 K a určena aktivační energie nečistoty zodpovědné za semiizolační stav s hodnotou 0.75 eV od okraje vodivostního pásu. Připravené radiační detektory byly charakterizovány spektry výšky impulzů od alfa částic s výsledkem 85% sběrné účinnosti náboje. (cs)
Title
  • Evaluation of semiinsulating annealed InP:Ta for radiation detectors
  • Vyhodnocení semiizolačního žíhaného InP:Ta pro radiační detektory (cs)
  • Evaluation of semiinsulating annealed InP:Ta for radiation detectors (en)
skos:prefLabel
  • Evaluation of semiinsulating annealed InP:Ta for radiation detectors
  • Vyhodnocení semiizolačního žíhaného InP:Ta pro radiační detektory (cs)
  • Evaluation of semiinsulating annealed InP:Ta for radiation detectors (en)
skos:notation
  • RIV/67985882:_____/06:00076253!RIV07-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 3956;3961
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(KAN400670651), Z(AV0Z10100520), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika
  • 6 Pt. II
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 474741
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/06:00076253
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • particle detectors; III-V semiconductors; Hall effect (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • US - Spojené státy americké
http://linked.open...ontrolniKodProRIV
  • [0D4A2C43FC35]
http://linked.open...i/riv/nazevZdroje
  • IEEE Transactions on Nuclear Science
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 53
http://linked.open...iv/tvurceVysledku
  • Kozak, Halina
  • Žďánský, Karel
  • Pekárek, Ladislav
  • Gorodynskyy, Vladyslav
http://linked.open...n/vavai/riv/zamer
issn
  • 0018-9499
number of pages
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