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Description
  • V článku jsou prezentovány vlastnosti tenkých vrstev připravených při různých depozičních podmínkách metodou pulsní laserové depozice. XRD měření krystalinity, prováděné na vrstvách o tloušťce od 150 nm do 440 nm, prokázala vznik krystalických vrstev se strukturou skutteruditu nebo amorfních v závislosti na depozičních podmínkách. U 60 nm tlustých vrstev s texturou skutteruditu byl měřen Seebeckův koeficient a resistivita v rozsahu teplot od 300 K do 600 K. (cs)
  • The properties of thin layers prepared, with different deposition conditions, by pulsed laser deposition (PLD) from Yb0.19Co4Sb12 target are presented. The layers from 150 nm up to 440 nm were examined by XRD method. Depends on the deposition conditions the layers between amorphous and skutterudite structures were obtained. The 60 nm thick layers with skutterudite structure were characterized by Seebeck coefficient and resistivity measurements in the temperature range from 300 K to 600 K.
  • The properties of thin layers prepared, with different deposition conditions, by pulsed laser deposition (PLD) from Yb0.19Co4Sb12 target are presented. The layers from 150 nm up to 440 nm were examined by XRD method. Depends on the deposition conditions the layers between amorphous and skutterudite structures were obtained. The 60 nm thick layers with skutterudite structure were characterized by Seebeck coefficient and resistivity measurements in the temperature range from 300 K to 600 K. (en)
Title
  • Thin layers prepared by pulsed laser deposition from Yb0.19Co4Sb12 target
  • Tenké vrstvy připravené pulzní laserovou depozicí z Yb0.19Co4Sb12 terče (cs)
  • Thin layers prepared by pulsed laser deposition from Yb0.19Co4Sb12 target (en)
skos:prefLabel
  • Thin layers prepared by pulsed laser deposition from Yb0.19Co4Sb12 target
  • Tenké vrstvy připravené pulzní laserovou depozicí z Yb0.19Co4Sb12 terče (cs)
  • Thin layers prepared by pulsed laser deposition from Yb0.19Co4Sb12 target (en)
skos:notation
  • RIV/67985882:_____/06:00051295!RIV07-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 451;454
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  • Z(AV0Z10100520), Z(AV0Z20670512), Z(AV0Z40500505)
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  • 503821
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  • RIV/67985882:_____/06:00051295
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  • thermoelectricity; thin films; pulsed laser deposition; thermoelectric devices (en)
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  • [9DCD34623CF6]
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  • Wien
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  • Piscataway
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  • Proceedings ICT'06
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  • Jelínek, Miroslav
  • Kocourek, Tomáš
  • Navrátil, Jiří
  • Beneš, L.
  • Zelinka, Jiří
  • Vaniš, Jan
  • Walachová, Jarmila
  • Lorinčík, Jan
  • Zeipl, Radek
http://linked.open...vavai/riv/typAkce
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number of pages
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  • IEEE
https://schema.org/isbn
  • 1-4244-0811-3
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