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Description
  • V této práci se prezentuje výzkum vlivu podmínek růstu na elektrické a optické vlastnosti InAs1-x Sbx (x<0.1) získávaného pomocí MOVP. Vysoká kvalita InAs1-x Sbx je dosažena při teplotě růstu vyšší než 600oC. Koncentrace elektronů v objemu vrstev je pod 015 cm-3 a jejich pohyblivost je nad 105 cm2/V.s. Fotoluminiscenční spektrum takových vrstev vykazuje dva luminiscenční pásy s maximy při 415 eV a 400 meV, které připisujeme exitonovým přechodům a přechodům elektrony vodivého pásu – valenční zóna. (cs)
  • In this paper we present the influence of the growth parameters on the electrical and optical properties of metal organic vapor phase epitaxial InAs1-x Sbx (x<0.1). High quality InAs1-x Sbx is grown at temperatures above 600 oC. The bulk carrier concentration is below 1015 cm-3 and the nobilities are above 105 cm2/V.s. The PL spectrum is dominated by two lines at 415 meV and 400 meV, which are ascribed to exciton and free to bound recombination.
  • In this paper we present the influence of the growth parameters on the electrical and optical properties of metal organic vapor phase epitaxial InAs1-x Sbx (x<0.1). High quality InAs1-x Sbx is grown at temperatures above 600 oC. The bulk carrier concentration is below 1015 cm-3 and the nobilities are above 105 cm2/V.s. The PL spectrum is dominated by two lines at 415 meV and 400 meV, which are ascribed to exciton and free to bound recombination. (en)
Title
  • Influence of growth conditions on optical and electrical properties of MOVPE-grown InAsSb
  • Influence of growth conditions on optical and electrical properties of MOVPE-grown InAsSb (en)
  • Vliv podmínek růstu na optické a elektrické vlastnosti InAsSb pěstovaného technologií MOVPE (cs)
skos:prefLabel
  • Influence of growth conditions on optical and electrical properties of MOVPE-grown InAsSb
  • Influence of growth conditions on optical and electrical properties of MOVPE-grown InAsSb (en)
  • Vliv podmínek růstu na optické a elektrické vlastnosti InAsSb pěstovaného technologií MOVPE (cs)
skos:notation
  • RIV/67985882:_____/06:00043998!RIV07-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 113;118
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(KSK1010601), Z(AV0Z20670512)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 479399
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/06:00043998
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • epitaxial growth; III-V semiconductors; indium compounds; photoluminescence (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [48372D741687]
http://linked.open...v/mistoKonaniAkce
  • Toulouse
http://linked.open...i/riv/mistoVydani
  • New York
http://linked.open...i/riv/nazevZdroje
  • NGS12: Proceedings of the 12th International Conference on Narrow Gap Semiconductors
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Gladkov, Petr
  • Vaňková, V.
  • Botha, J. R.
  • Botha, L.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Taylor & Francis
https://schema.org/isbn
  • 0-7503-1016-2
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