About: Impact of rare earth elements on the properties of InP-based epitaxial layers

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The addition of all studied rare earth elements (Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb a Lu) leads to the reduction of structural defect densities by one and a half order of magnitude and undesirable electrically active impurities were reduced by up to three orders of magnitude. PL spectra confirmed the high purity and structural quality of grown InP layers. The addition of Ce and Yb leads to the introduction into the host lattice. The addition of all studied rare earth elements (Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb a Lu) leads to the reduction of structural defect densities by one and a half order of magnitude and undesirable electrically active impurities were reduced by up to three orders of magnitude. PL spectra confirmed the high purity and structural quality of grown InP layers. The addition of Ce and Yb leads to the introduction into the host lattice. (en) Přídavek všech studovaných vzácných zemin (Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Tm, Yb a Lu) do taveniny při epitaxním růstu z kapalné fáze vedl k redukci strukturních defektů o jeden a půl řádu a koncentrace nežádoucích elektroaktivních příměsí se snížila o tři řády. PL spektra potvrdila vysokou čistotu a strukturní kvalitu připravebných InP vrstev. Přídavek Ce a Yb vedl k jejich zabudování do krystalové mříže. (cs)
Title	Impact of rare earth elements on the properties of InP-based epitaxial layers Impact of rare earth elements on the properties of InP-based epitaxial layers (en) Vliv vzácných zemin na vlastnosti vrstev na bázi InP (cs)
skos:prefLabel	Impact of rare earth elements on the properties of InP-based epitaxial layers Impact of rare earth elements on the properties of InP-based epitaxial layers (en) Vliv vzácných zemin na vlastnosti vrstev na bázi InP (cs)
skos:notation	RIV/67985882:_____/05:00021048!RIV06-AV0-67985882
http://linked.open.../vavai/riv/strany	187;187
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/03/0379), Z(AV0Z20670512)
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Zavadil, Jiří Žďánský, Karel Grym, Jan Procházková, Olga
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	524306
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/05:00021048
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	epitaxial growth; semiconductors; rare earth compounds (en)
http://linked.open.../riv/klicoveSlovo	rare earth compounds epitaxial growth semiconductors
http://linked.open...odStatuVydavatele	SK - Slovenská republika
http://linked.open...ontrolniKodProRIV	[7421D6324BDB]
http://linked.open...i/riv/nazevZdroje	ChemZi
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	The use of rare earth elements to improve the preparation of InP- and PbI2- based semiconductor materials for detection of ionizing radiation
http://linked.open...UplatneniVysledku	2005
http://linked.open...v/svazekPeriodika	1
http://linked.open...iv/tvurceVysledku	Grym, Jan Zavadil, Jiří Žďánský, Karel Procházková, Olga Kopecká, M.
http://linked.open...n/vavai/riv/zamer	Materiály, struktury, systémy a signály v elektronice, optoelektronice a fotonice
issn	1336-7242
number of pages	1 (xsd:int)

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