About: Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt     Goto   Sponge   NotDistinct   Permalink

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Description
  • Epitaxní vrstvy InP byly připraveny s přidáním ceria, tulia a lutecia do růstové taveniny. Připravené vrstvy byly vyšetřovány pomocí fotoluminescenčí spektroskopie a C-V měření. Vrstvy připravené s přidáním Ce a Tm vykazují změnu elektrické vodivosti z n na p, kdežto vrstvy připravené s přidáním Lu vykazují pouze n-typ vodivosti. Byla pozorována luminescence z vnitřních 4f hladin Ce, což dokazuje jeho zabudování do InP mříže. (cs)
  • InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with cerium, thulium and lutetium additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spetroscopy and C-V measurements. Layers prepared with the addition of Ce and Tm exhibit the change of electrical conductivity from n to p, while those grown with Lu admixture remain n-type. Ce has been found to be incorporated into the InP lattice.
  • InP single crystals were grown by liquid phase epitaxy on semi-insulating InP:Fe and n-type InP:Sn substrates with cerium, thulium and lutetium additions to the growth melt. Grown layers were examined by low-temperature photoluminescence spetroscopy and C-V measurements. Layers prepared with the addition of Ce and Tm exhibit the change of electrical conductivity from n to p, while those grown with Lu admixture remain n-type. Ce has been found to be incorporated into the InP lattice. (en)
Title
  • Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt
  • Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt (en)
  • Optické vlastnosti InP vrstev připravených s přidáním Ce, Tm a Lu do růstové taveniny (cs)
skos:prefLabel
  • Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt
  • Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt (en)
  • Optické vlastnosti InP vrstev připravených s přidáním Ce, Tm a Lu do růstové taveniny (cs)
skos:notation
  • RIV/67985882:_____/05:00000072!RIV/2005/GA0/A13005/N
http://linked.open.../vavai/riv/strany
  • 498;502
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA102/03/0379), P(KSK1010104)
http://linked.open...iv/cisloPeriodika
  • 4/5
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 534715
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/05:00000072
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductors;photoluminescence;galvanomagnetic effects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV
  • [9F652663A163]
http://linked.open...i/riv/nazevZdroje
  • Crystal Research and Technology
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 40
http://linked.open...iv/tvurceVysledku
  • Gladkov, Petr
  • Zavadil, Jiří
  • Procházková, Olga
issn
  • 0232-1300
number of pages
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