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  • Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarbozylic acids are very interesting as structural and selective etchants and Br2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices.
  • Anisotropic and isotropic etchants are very useful in preparation of InAs based devices. Polycarbozylic acids are very interesting as structural and selective etchants and Br2-based systems have been found to give good results for chemical polishing and etching of A3B5 semiconductors. We investigated both systems with a view towards applications in InAs based optoelectronic devices. (en)
  • Anizotropní i izotropní leptací směsi jsou velmi důležité pro přípravu součástek na bázi InAs. Polycarboxylické kyseliny mají velmi zajímavé vlastnosti jako složky strukturních a selektivních leptadel a leptadla s bromem dávají velmi dobré výsledky při chemickém leštění a izotropním leptání polovodičů A3B5. V práci jsou shrnuty výsledky studia obou systémů zaměřeného na použití v přípravě optoelektronických součástek z InAs. (cs)
Title
  • Structural modification of InAs based materials for mid-infrared optoelectronic devices
  • Structural modification of InAs based materials for mid-infrared optoelectronic devices (en)
  • Tvarování struktur na bázi InAs pro optoelektronické součástky ve střední infračervené oblasti spekra (cs)
skos:prefLabel
  • Structural modification of InAs based materials for mid-infrared optoelectronic devices
  • Structural modification of InAs based materials for mid-infrared optoelectronic devices (en)
  • Tvarování struktur na bázi InAs pro optoelektronické součástky ve střední infračervené oblasti spekra (cs)
skos:notation
  • RIV/67985882:_____/04:00105964!RIV/2005/MSM/A13005/N
http://linked.open.../vavai/riv/strany
  • 203;206
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 610), Z(AV0Z2067918)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 588477
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/04:00105964
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductors;photoluminescence;galvanomagnetic effects (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [2E2507C11B1A]
http://linked.open...v/mistoKonaniAkce
  • Smolenice
http://linked.open...i/riv/mistoVydani
  • Piscataway
http://linked.open...i/riv/nazevZdroje
  • ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Nohavica, Dušan
  • Krier, A.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • IEEE
https://schema.org/isbn
  • 0-7803-8535-7
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