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  • Epitaxní růst heterostruktur GaxIn1-xP/GaAs (100) z kapalné fáze byl optimalizován pro přípravu tlustých epitaxních vrstev při 800oC. Bylo zjištěno, že podmínky růstu vedoucí k přípravě zrcadlově lesklých bezdefektních struktur je možné měnit ve velmi úzkém rozmezí. Pěstování krycí vrstvy GaAs z taveniny v Bi bylo rovněž studováno. Byl navržen nový model popisující tvorbu defektů souvisejících s odchylkou od planarity povvrchu podložky. Byla pozorována ostrá hranice mezi oblastmi s uspořádanou a neuspořádanou sítí dislokací v horní Bi:GaAs vrstvě a strukturní nepřizpůsobení v této vrstvě bylo kompensováno přídavkem In , takže horní vrstva odpovídala složením pevnému roztoku GaxIn1-x As s hodnotou x> 0.95. (cs)
  • Growth of the GaxIn1-xP/GaAs (100)heterostructures from the liquid phase was optimised at 800oC to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping the ternary layer by GaAs grown from Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects have been suggested. Sharp boundary between ordered and disordered dislocations network in the top Bi:GaAs layer was observed and lattice misfit has been compensated by In addition to produce Bi:GaxIn1-x As /x>0.95/.
  • Growth of the GaxIn1-xP/GaAs (100)heterostructures from the liquid phase was optimised at 800oC to obtain thick epitaxial layers. Experimental conditions for growth of the mirror like, morphological defects free structures are very narrow. Capping the ternary layer by GaAs grown from Bi or Bi-Ga melt was investigated as well. New model of the substrate planarity related defects have been suggested. Sharp boundary between ordered and disordered dislocations network in the top Bi:GaAs layer was observed and lattice misfit has been compensated by In addition to produce Bi:GaxIn1-x As /x>0.95/. (en)
Title
  • Preparation and properties of GaInP2/GaAs heterostructures
  • Příprava a vlastnosti heterostruktur GaInP2/GaAs (cs)
  • Preparation and properties of GaInP2/GaAs heterostructures (en)
skos:prefLabel
  • Preparation and properties of GaInP2/GaAs heterostructures
  • Příprava a vlastnosti heterostruktur GaInP2/GaAs (cs)
  • Preparation and properties of GaInP2/GaAs heterostructures (en)
skos:notation
  • RIV/67985882:_____/04:00105962!RIV/2005/MSM/A13005/N
http://linked.open.../vavai/riv/strany
  • 57;60
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 610), Z(AV0Z2067918)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 581536
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  • RIV/67985882:_____/04:00105962
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  • semiconductors;photoluminescence;electric properties (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [1F62870F8705]
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  • Smolenice
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  • Piscataway
http://linked.open...i/riv/nazevZdroje
  • ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems
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http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
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  • Gladkov, Petr
  • Nohavica, Dušan
  • Žďánský, Karel
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http://linked.open...n/vavai/riv/zamer
number of pages
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  • IEEE
https://schema.org/isbn
  • 0-7803-8535-7
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