About: Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers     Goto   Sponge   NotDistinct   Permalink

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Description
  • Deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements have been made on AlGaAs/GaAs single quantum well (QW) laser diode structures. Si-related DX centres in the n-type AlGaAs layer adjacent to the QW have been observed by DLTS with reverse bias voltage and reduced bias pulse excitation. The DLTS peak of the DX centre is wiped out at zero bias and large injection pulse excitation and a new peak appears which is interpreted as being due to an electron trap inside the QW. Identification of the electron trap has been discussed.
  • Deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements have been made on AlGaAs/GaAs single quantum well (QW) laser diode structures. Si-related DX centres in the n-type AlGaAs layer adjacent to the QW have been observed by DLTS with reverse bias voltage and reduced bias pulse excitation. The DLTS peak of the DX centre is wiped out at zero bias and large injection pulse excitation and a new peak appears which is interpreted as being due to an electron trap inside the QW. Identification of the electron trap has been discussed. (en)
  • Laserové diodové struktury s jednou kvantovou jámou (QW) byly měřeny transientní spektroskopií (DLTS) a závislostmi kapacity na napětí (C-V). Pomocí DLTS s reversním přiloženým napětím a exitací redukčními pulsy byla pozorována DX centra od Si ve vrstvě AlGaAs typu n v souseddství QW. Vrchol DLTS od DX centra vymizí při nulovém předpětí a vysoké pulsní excitaci a objeví se nový vrchol, který je vyložen, jakožto způsobený elektronovou pastí uvnitř QW. Identifikace elektronové pasti je součástí diskuse. (cs)
Title
  • Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers
  • Lasery Al xGa 1-x /GaAs s jednou kvantovou jámou zkoumané transientní spektroskopií hlubokých hladin (cs)
  • Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers (en)
skos:prefLabel
  • Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers
  • Lasery Al xGa 1-x /GaAs s jednou kvantovou jámou zkoumané transientní spektroskopií hlubokých hladin (cs)
  • Deep level transient spectroscopy of AlxGa 1-x As/GaAs single-quantum-well lasers (en)
skos:notation
  • RIV/67985882:_____/04:00105854!RIV/2005/AV0/A13005/N
http://linked.open.../vavai/riv/strany
  • 897;901
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(IBS2067354), P(KSK1010104)
http://linked.open...iv/cisloPeriodika
  • 7
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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http://linked.open...dnocenehoVysledku
  • 559555
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/04:00105854
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • semiconductor quantum wells;nanostructured materials;deep levels (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [3240572EAFBA]
http://linked.open...i/riv/nazevZdroje
  • Semiconductor Science and Technology
http://linked.open...in/vavai/riv/obor
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http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 19
http://linked.open...iv/tvurceVysledku
  • Žďánský, Karel
  • Gorodynskyy, Vladyslav
  • Kosíková, Jitka
  • Kapon, E.
  • Fekete, D.
  • Rudra, A.
issn
  • 0268-1242
number of pages
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