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Description
  • Elektrochemicky lze vytvářet pory take v polovodičích A3 B5. Konkrétně byly v naší laboratoři studovány podmínky přípravy porů v InP, GaAs a GaP. Nejúplnější soubor výsledků byl shromážděn v případě InP, který umožňuje přípravu téměř dokonale samoorganizovaných mikroporů. Byly připraveny i struktury vícenásobné, kombinující krystalografické a proudové pory. Jsou uvedeny i podrobnosti vedoucí k přípravě různě orientovaných krystalografických porů. Roněž v GaAs a GaP existují oba typy porů, ale v jejich pravidelnosti existují specifické rozdíly. (cs)
  • Electrochemically etched pores are accessible also in A3 B5 semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences.
  • Electrochemically etched pores are accessible also in A3 B5 semiconductors. In particular, pores in InP, GaAs and GaP have been investigated in our laboratory. More complex experimental data have been collected for InP which is suitable for the preparation almost self organized pores net. Pores multilayer containing current oriented and/or crystallographic pores was prepared and some details of the process are discussed. The GaAs and GaP demonstrate both, current oriented and crystallographic pores as well with specific differences. (en)
Title
  • Micro and nanopores formation in A3 B5 semiconductors
  • Tvorba mikro a nanoporů v polovodičích A3 B5./sup (cs)
  • Micro and nanopores formation in A3 B5 semiconductors (en)
skos:prefLabel
  • Micro and nanopores formation in A3 B5 semiconductors
  • Tvorba mikro a nanoporů v polovodičích A3 B5./sup (cs)
  • Micro and nanopores formation in A3 B5 semiconductors (en)
skos:notation
  • RIV/67985882:_____/04:00023420!RIV06-AV0-67985882
http://linked.open.../vavai/riv/strany
  • 176;181
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 610), P(ME 697), Z(AV0Z2067918)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 573458
http://linked.open...ai/riv/idVysledku
  • RIV/67985882:_____/04:00023420
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • III-V semiconductors; porous semiconductors (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [1A0E2357F9E2]
http://linked.open...v/mistoKonaniAkce
  • Brno
http://linked.open...i/riv/mistoVydani
  • Brno
http://linked.open...i/riv/nazevZdroje
  • Proceedings of the International Conference NANO'2004
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Dvořák, Martin
  • Gladkov, Petr
  • Nohavica, Dušan
  • Zelinka, Jiří
  • Pirov, J.
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
http://purl.org/ne...btex#hasPublisher
  • Vysoké učení technické v Brně. Nakladatelství VUTIUM
https://schema.org/isbn
  • 80-214-2793-0
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