About: Formation of porous layer during anodic etching of the III-V semiconductors.

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About: Formation of porous layer during anodic etching of the III-V semiconductors. Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Epitaxial technique have been used and optimized for preparation of the GaInP/GaAs as well as InP, GaP and GaAs deposition. Electrochemical etching system is developed /multielectrode approach, electrolyte circulation, sample illumination etc./ for porous III-V materials preparation. First experimental results are presented. Epitaxial technique have been used and optimized for preparation of the GaInP/GaAs as well as InP, GaP and GaAs deposition. Electrochemical etching system is developed /multielectrode approach, electrolyte circulation, sample illumination etc./ for porous III-V materials preparation. First experimental results are presented. (en)
Title	Formation of porous layer during anodic etching of the III-V semiconductors. Formation of porous layer during anodic etching of the III-V semiconductors. (en)
skos:prefLabel	Formation of porous layer during anodic etching of the III-V semiconductors. Formation of porous layer during anodic etching of the III-V semiconductors. (en)
skos:notation	RIV/67985882:_____/03:13030111!RIV/2004/AV0/A13004/N
http://linked.open.../vavai/riv/strany	51;52
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(ME 610), Z(AV0Z2067918)
http://linked.open...vai/riv/dodaniDat	2004
http://linked.open...aciTvurceVysledku	Gladkov, Petr Nohavica, Dušan
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	607589
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/03:13030111
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	III-V semiconductors (en)
http://linked.open.../riv/klicoveSlovo	III-V semiconductors
http://linked.open...ontrolniKodProRIV	[ECE8582ADCF5]
http://linked.open...v/mistoKonaniAkce	Račkova dolina [SK]
http://linked.open...i/riv/mistoVydani	Bratislava
http://linked.open...i/riv/nazevZdroje	DMS-RE 2003 Development of Materials Science in Research and Education.
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	http://linked.opendata.cz/resource/domain/vavai/projekt/ME%20610
http://linked.open...UplatneniVysledku	2003
http://linked.open...iv/tvurceVysledku	Gladkov, Petr Nohavica, Dušan
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2003-09-15 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Výzkum generování, přenosu a zpracování širokopásmových, etalonových a řečových signálů s využitím příslušných polovodičových a optických struktur
number of pages	2 (xsd:int)
http://purl.org/ne...btex#hasPublisher	NOI
https://schema.org/isbn	80-89088-16-3

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