About: High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.     Goto   Sponge   NotDistinct   Permalink

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  • Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by Czochralski technique. The as grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing.
  • Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by Czochralski technique. The as grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing. (en)
Title
  • High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
  • High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements. (en)
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  • High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
  • High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements. (en)
skos:notation
  • RIV/67985882:_____/03:13030099!RIV/2004/AV0/A13004/N
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  • RIV/67985882:_____/03:13030099
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  • semiconductors; photoluminescence; galvanomagnetic effects (en)
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  • DE - Spolková republika Německo
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  • [7893B46E97E8]
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  • Physica Status Solidi C
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  • 0
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  • Zavadil, Jiří
  • Žďánský, Karel
  • Procházková, Olga
  • Kacerovský, Pavel
  • Pekárek, Ladislav
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  • 1610-1634
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