About: InP Schotky junctions for zero bias detector diodes.

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	InP Schottky junctions was prepared by using Cr+Au or Ag metallization and different surface pretreatment of InP to obtain good junctions suitable for application as zero bias detectors. Electrical characteristics were studied by current-voltage and capacitance voltage measurements in the temperature range of 80-320 K. Depending on the preparation conditions, the diodes exhibited a Schottky barrier height in the range of 0.38-0.49 eV with room temperature ideality factors in the range of 1.08-1.23. InP Schottky junctions was prepared by using Cr+Au or Ag metallization and different surface pretreatment of InP to obtain good junctions suitable for application as zero bias detectors. Electrical characteristics were studied by current-voltage and capacitance voltage measurements in the temperature range of 80-320 K. Depending on the preparation conditions, the diodes exhibited a Schottky barrier height in the range of 0.38-0.49 eV with room temperature ideality factors in the range of 1.08-1.23. (en)
Title	InP Schotky junctions for zero bias detector diodes. InP Schotky junctions for zero bias detector diodes. (en)
skos:prefLabel	InP Schotky junctions for zero bias detector diodes. InP Schotky junctions for zero bias detector diodes. (en)
skos:notation	RIV/67985882:_____/03:13030020!RIV/2004/AV0/A13004/N
http://linked.open.../vavai/riv/strany	113;116
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(KSK1010104), Z(AV0Z2067918)
http://linked.open...iv/cisloPeriodika	1/2
http://linked.open...vai/riv/dodaniDat	2004
http://linked.open...aciTvurceVysledku	Žďánský, Karel
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	610633
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/03:13030020
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Schottky barriers; semiconductor technology (en)
http://linked.open.../riv/klicoveSlovo	semiconductor technology Schottky barriers
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[5EB571CACA58]
http://linked.open...i/riv/nazevZdroje	Vacuum
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	Condensed matter physics and materials science
http://linked.open...UplatneniVysledku	2003
http://linked.open...v/svazekPeriodika	71
http://linked.open...iv/tvurceVysledku	Žďánský, Karel Horvath, Zs. J. Püspöki, S. Rakovics, V. Szentpáli, B.
http://linked.open...n/vavai/riv/zamer	Výzkum generování, přenosu a zpracování širokopásmových, etalonových a řečových signálů s využitím příslušných polovodičových a optických struktur
issn	0042-207X
number of pages	4 (xsd:int)

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