About: Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE.     Goto   Sponge   NotDistinct   Permalink

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  • The characterization of InP (>10m.mu.) layers prepared by LPE with Pr, Dy or Tb (REE) addition in the melt is reported. The conductivity has been changed from n to p type when REE exceeded certain concentration limit (0.15 wt per cent for Pr, 0.05 wt per cent for Tb and 0.03 for Dy). Comparison of PL peaks of n- and p- type conductivity laeyrs with obtained electrical data lead to conclusion that the dominant acceptor impurity for the n- and p-n type crossover is Ge for Pr addition and Mn for Tb and Dy addition.
  • The characterization of InP (>10m.mu.) layers prepared by LPE with Pr, Dy or Tb (REE) addition in the melt is reported. The conductivity has been changed from n to p type when REE exceeded certain concentration limit (0.15 wt per cent for Pr, 0.05 wt per cent for Tb and 0.03 for Dy). Comparison of PL peaks of n- and p- type conductivity laeyrs with obtained electrical data lead to conclusion that the dominant acceptor impurity for the n- and p-n type crossover is Ge for Pr addition and Mn for Tb and Dy addition. (en)
Title
  • Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE.
  • Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE. (en)
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  • Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE.
  • Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE. (en)
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  • RIV/67985882:_____/03:13030018!RIV/2004/AV0/A13004/N
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  • rare earth compounds; semiconductors; liqiud phase epitaxy (en)
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  • Grym, Jan
  • Zavadil, Jiří
  • Žďánský, Karel
  • Procházková, Olga
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  • 1610-1634
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