About: P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping.

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About: P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping. Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	InP was grown by LPE on semi-insulating InP:Fe with Pr in the melt. Hall effect measurements revealed p-type conductivity with the hole concentration 6x10 14 cm -3 and mobility 150 cm 2 V -1 s -1 at the room temperature. The energy 223 meV of the dominant acceptor was determined from the temperature dependence of the hole concentration. A photoluminescence line was found at 1.195 eV, close to the previously estimated no-phonon line of Ge acceptor. Hence Ge acceptors cause the p-type conductivity of the grown InP. InP was grown by LPE on semi-insulating InP:Fe with Pr in the melt. Hall effect measurements revealed p-type conductivity with the hole concentration 6x10 14 cm -3 and mobility 150 cm 2 V -1 s -1 at the room temperature. The energy 223 meV of the dominant acceptor was determined from the temperature dependence of the hole concentration. A photoluminescence line was found at 1.195 eV, close to the previously estimated no-phonon line of Ge acceptor. Hence Ge acceptors cause the p-type conductivity of the grown InP. (en)
Title	P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping. P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping. (en)
skos:prefLabel	P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping. P-type InP grown by liquid phase epitaxy with rare earths: not intentional Ge acceptor doping. (en)
skos:notation	RIV/67985882:_____/01:13010036!RIV/2003/AV0/A13003/N
http://linked.open.../vavai/riv/strany	10;13
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA102/99/0341), P(KSK1010601), Z(AV0Z2067918)
http://linked.open...iv/cisloPeriodika	1/3
http://linked.open...vai/riv/dodaniDat	2003
http://linked.open...aciTvurceVysledku	Zavadil, Jiří Žďánský, Karel Procházková, Olga Gladkov, Petr
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fotoniky a elektroniky AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	693669
http://linked.open...ai/riv/idVysledku	RIV/67985882:_____/01:13010036
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	semiconductor materials; - luminescence (en)
http://linked.open.../riv/klicoveSlovo	- luminescence semiconductor materials
http://linked.open...odStatuVydavatele	CH - Švýcarská konfederace
http://linked.open...ontrolniKodProRIV	[B0AE3D19CA2D]
http://linked.open...i/riv/nazevZdroje	Materials Science and Engineering - B. Solid State Materials for Advanced Technology
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...ocetUcastnikuAkce	0 (xsd:int)
http://linked.open...nichUcastnikuAkce	0 (xsd:int)
http://linked.open...vavai/riv/projekt	Condensed matter physics and materials research as a basis for preparation of new materials, structures and technologies Effect of rare-earth elements on preparation and properties of semiconductor AIIIBV materials
http://linked.open...UplatneniVysledku	2001
http://linked.open...v/svazekPeriodika	B80
http://linked.open...iv/tvurceVysledku	Gladkov, Petr Zavadil, Jiří Žďánský, Karel Procházková, Olga
http://linked.open...n/vavai/riv/zamer	Výzkum generování, přenosu a zpracování širokopásmových, etalonových a řečových signálů s využitím příslušných polovodičových a optických struktur
issn	0921-5107
number of pages	4 (xsd:int)

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