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  • An alternative method of the reflectance spectrum measurement of a thin film on a wafer is presented. The basic idea of this method is in replacing a standard measurement method employing a calibrated mirror with a two-step reflectance measurement method using both a thin-film structure and a bare wafer. This double comparative method can simply eliminate the unknown reflectance spectrum of the reference mirror. The method was successfully tested on a SiO2 thin film on different B- and P-doped Si substrates. The obtained reflectance spectra were compared with the theoretical model.
  • An alternative method of the reflectance spectrum measurement of a thin film on a wafer is presented. The basic idea of this method is in replacing a standard measurement method employing a calibrated mirror with a two-step reflectance measurement method using both a thin-film structure and a bare wafer. This double comparative method can simply eliminate the unknown reflectance spectrum of the reference mirror. The method was successfully tested on a SiO2 thin film on different B- and P-doped Si substrates. The obtained reflectance spectra were compared with the theoretical model. (en)
  • Je prezentována alternativní metoda měření spektrální odrazivosti tenké vrstvy na substrátu. Základní myšlenkou této metody je nahrazení standardního měření, které používá kalibrované zrcadlo, měřením odrazivosti ve dvou krocích, a to struktury s tenkou vrstvou a holé podložky. Tato dvojnásobná srovnávací metoda dovoluje jednoduše eliminovat vliv neznámé spektrální odrazivosti referenčního zrcadla. Metoda byla úspěšně testována na tenké vrstvě SiO2 na různě dotovaných Si podložkách a získaná spektra odrazivosti byla porovnána s teoretickým modelem. (cs)
Title
  • Spectral reflectometry of SiO2 thin films on the silicon wafers
  • Spectral reflectometry of SiO2 thin films on the silicon wafers (en)
  • Měření spektrální odrazivosti tenkých vrstev SiO2 na křemíkových podložkách (cs)
skos:prefLabel
  • Spectral reflectometry of SiO2 thin films on the silicon wafers
  • Spectral reflectometry of SiO2 thin films on the silicon wafers (en)
  • Měření spektrální odrazivosti tenkých vrstev SiO2 na křemíkových podložkách (cs)
skos:notation
  • RIV/61989100:27350/08:00019683!RIV09-MSM-27350___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM6198910016)
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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http://linked.open...iv/duvernostUdaju
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  • 396449
http://linked.open...ai/riv/idVysledku
  • RIV/61989100:27350/08:00019683
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Spectral reflectance measurement; thin-film structure; bare wafer; non-calibrated mirror (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...ontrolniKodProRIV
  • [46C92628C3AF]
http://linked.open...v/mistoKonaniAkce
  • Hnanice
http://linked.open...i/riv/mistoVydani
  • Praha
http://linked.open...i/riv/nazevZdroje
  • Development of Materials Science in Research and Education, Proceedings of the 18th Joint Seminar
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...iv/tvurceVysledku
  • Ciprian, Dalibor
  • Hlubina, Petr
  • Potůček, Zdeněk
  • Luňáček, Jiří
  • Luňáčková, Milena
http://linked.open...vavai/riv/typAkce
http://linked.open.../riv/zahajeniAkce
http://linked.open...n/vavai/riv/zamer
number of pages
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  • Czechoslovak Association for Crystal Growth (CSACG)
https://schema.org/isbn
  • 978-80-254-0864-3
http://localhost/t...ganizacniJednotka
  • 27350
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