About: Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1104 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly. Hybrid field-effect transistors (FETs) based on poly(3-hexylthiophene) (P3HT) containing CdSe quantum dots (QDs) were fabricated. The effect of the concentration of QDs on charge transport in the hybrid material was studied. The influence of the QDs capping ligand on charge transport parameters was investigated by replacing the conventional trioctylphosphine oxide (TOPO) surfactant with pyridine to provide closer contact between the organic and inorganic components. Electrical parameters of FETs with an active layer made of P3HT:CdSe QDs blend were determined, showing field-effect hole mobilities up to 1.1104 cm2/Vs. Incorporation of TOPO covered CdSe QDs decreased the charge carrier mobility while the pyridine covered CdSe QDs did not alter this transport parameter significantly. (en)
Title	Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots (en)
skos:prefLabel	Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots (en)
skos:notation	RIV/61389013:_____/13:00392068!RIV14-AV0-61389013
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(AV0Z40500505)
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Nešpůrek, Stanislav Bielecka, Urszula
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav makromolekulární chemie AV ČR, v. v. i.
http://linked.open...dnocenehoVysledku	77951
http://linked.open...ai/riv/idVysledku	RIV/61389013:_____/13:00392068
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	organic transistor; poly(3-hexylthiophene); CdSe (en)
http://linked.open.../riv/klicoveSlovo	organic transistor poly(3-hexylthiophene) CdSe
http://linked.open...odStatuVydavatele	PL - Polská republika
http://linked.open...ontrolniKodProRIV	[6CE3A6025AD3]
http://linked.open...i/riv/nazevZdroje	Materials Science-Poland
http://linked.open...in/vavai/riv/obor	CD
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	31
http://linked.open...iv/tvurceVysledku	Nešpůrek, Stanislav Bartkowiak, W. Lutsyk, P. Janus, K. Bielecka, Urszula Nyk, M. Samoć, M.
http://linked.open...ain/vavai/riv/wos	000317956100020
http://linked.open...n/vavai/riv/zamer	Progresivní makromolekulární materiály a supramolekulární systémy: syntéza a studium vlastností, jevů a možností využití pro speciální aplikace a moderní technologie
issn	2083-1331
number of pages	10 (xsd:int)
http://bibframe.org/vocab/doi	10.2478/s13536-013-0101-0

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