| Attributes | Values |
|---|
| rdf:type
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| Description
| - Photoconductive cells based on doped sintered cadmium sulfide were prepared by screen-printing. As a paste binder was used propylene glycol or glycerol sometimes thickened by poly(vinyl alcohol). Chlorides were used as fluxing agent and donor. Acceptors, 2-3 mg Cu or a mixture of 0.15 mg Ag. 0.75 mg Cu and 2.9 mg Mn per g CdS, made it possible to prepare photoconductive cells with the slope (resistance vs. illumination) higher than 1.5. The long-term stability of cell parameters was unfavourably influenced by a higher content of chlorides and by the content of liquid paste components. The latter can be lowered by recrystallization of starting CdS powder. Also the delay time between drying and annealing of the printed layer can affect the long-term stability of resistance and slope of cells.
- Photoconductive cells based on doped sintered cadmium sulfide were prepared by screen-printing. As a paste binder was used propylene glycol or glycerol sometimes thickened by poly(vinyl alcohol). Chlorides were used as fluxing agent and donor. Acceptors, 2-3 mg Cu or a mixture of 0.15 mg Ag. 0.75 mg Cu and 2.9 mg Mn per g CdS, made it possible to prepare photoconductive cells with the slope (resistance vs. illumination) higher than 1.5. The long-term stability of cell parameters was unfavourably influenced by a higher content of chlorides and by the content of liquid paste components. The latter can be lowered by recrystallization of starting CdS powder. Also the delay time between drying and annealing of the printed layer can affect the long-term stability of resistance and slope of cells. (en)
- Fotorezistory na bázi sulfidu kademnatého byly připraveny pomocí sítotisku. Jako pojivo pasty byly použity propylenglykol nebo glycerin, které byly v některých případech zahuštěny polyvinylalkoholem. Chloridy byly použity jako tavidlo a zdroj donorů. Akceptory použité v množstvích 2 – 3 mg Cu nebo ve směsi 0,15 mg Ag, 0,75 mg Cu a 2,9 mg Mn na g CdS, umožnily přípravu fotorezistorů se strmostí (závislost odporu na osvětlení) vyšší než 1,5. Dlouhodobá stabilita parametrů fotorezistorů byla nepříznivě ovlivněna vyšším obsahem chloridů a kapalných složek past. Obsah kapalných podílů lze snížit rekrystalizací výchozího prášku CdS. Dlouhodobou stabilitu odporu a strmosti fotorezistoru ovlivňuje také doba prodlevy mezi sušením a žíháním vrstvy. (cs)
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| Title
| - High-slope photoconductive cells based on screen-printed and sintered cadmium sulfide; the long-term stability properties
- Fotorezistory s vysokou strmostí připravené sintrací sulfidu kademnatého naneseného sítotiskem; dlouhodobá stabilita vlastností (cs)
- High-slope photoconductive cells based on screen-printed and sintered cadmium sulfide; the long-term stability properties (en)
|
| skos:prefLabel
| - High-slope photoconductive cells based on screen-printed and sintered cadmium sulfide; the long-term stability properties
- Fotorezistory s vysokou strmostí připravené sintrací sulfidu kademnatého naneseného sítotiskem; dlouhodobá stabilita vlastností (cs)
- High-slope photoconductive cells based on screen-printed and sintered cadmium sulfide; the long-term stability properties (en)
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| skos:notation
| - RIV/61389013:_____/07:00084694!RIV08-AV0-61389013
|
| http://linked.open.../vavai/riv/strany
| |
| http://linked.open...avai/riv/aktivita
| |
| http://linked.open...avai/riv/aktivity
| - Z(AV0Z40400503), Z(AV0Z40500505)
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| http://linked.open...iv/cisloPeriodika
| |
| http://linked.open...vai/riv/dodaniDat
| |
| http://linked.open...aciTvurceVysledku
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| http://linked.open.../riv/druhVysledku
| |
| http://linked.open...iv/duvernostUdaju
| |
| http://linked.open...titaPredkladatele
| |
| http://linked.open...dnocenehoVysledku
| |
| http://linked.open...ai/riv/idVysledku
| - RIV/61389013:_____/07:00084694
|
| http://linked.open...riv/jazykVysledku
| |
| http://linked.open.../riv/klicovaSlova
| - photoconductive cell; cadmium sulfide; sintering (en)
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| http://linked.open.../riv/klicoveSlovo
| |
| http://linked.open...odStatuVydavatele
| |
| http://linked.open...ontrolniKodProRIV
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| http://linked.open...i/riv/nazevZdroje
| - Journal of Optoelectronics and Advanced Materials
|
| http://linked.open...in/vavai/riv/obor
| |
| http://linked.open...ichTvurcuVysledku
| |
| http://linked.open...cetTvurcuVysledku
| |
| http://linked.open...UplatneniVysledku
| |
| http://linked.open...v/svazekPeriodika
| |
| http://linked.open...iv/tvurceVysledku
| - Nešpůrek, Stanislav
- Franc, Jiří
|
| http://linked.open...n/vavai/riv/zamer
| |
| issn
| |
| number of pages
| |
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