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Description
  • Diskutují se elektronová struktura, elektrické a fotoelektrické vlastnosti a možné elektronické aplikace polysilanů. Elektronové vlastnosti jsou ovlivňovány elektronovou delokalizací podél hlavního křemíkového polymerního řetězce. Boční .pi.-konjugované chromofory zvyšují fotostabilitu křemíkového řetězce a ovlivňují elektrické chování materiálu. Optická excitace vede ke vzniku excitonů, elektron-děrových párů a stavů s přenosem náboje. Transportní vlastnosti náboje oblivňují polarony pohybující se v neuspořádaném systému. (cs)
  • Electronic structure, electrical and photoelectrical properties and possible electronic applications of polysilanes are discussed. The electronic properties are influenced by electron delocalization along the polymer silicon backbone. Attached .pi.-conjugated chromophores improve the photostability of the silicon main chain, influence electrical behaviour. Optical excitations lead to the formation of excitons, electron-hole pairs and charge transfer states (ion-pairs). Charge carrier transport can be described by a model of disordered polarons.
  • Electronic structure, electrical and photoelectrical properties and possible electronic applications of polysilanes are discussed. The electronic properties are influenced by electron delocalization along the polymer silicon backbone. Attached .pi.-conjugated chromophores improve the photostability of the silicon main chain, influence electrical behaviour. Optical excitations lead to the formation of excitons, electron-hole pairs and charge transfer states (ion-pairs). Charge carrier transport can be described by a model of disordered polarons. (en)
Title
  • Polysilanes - advanced materials for optoelectronics
  • Polysilany – perspektivní optoelektronické materiály (cs)
  • Polysilanes - advanced materials for optoelectronics (en)
skos:prefLabel
  • Polysilanes - advanced materials for optoelectronics
  • Polysilany – perspektivní optoelektronické materiály (cs)
  • Polysilanes - advanced materials for optoelectronics (en)
skos:notation
  • RIV/61389013:_____/05:00021679!RIV06-AV0-61389013
http://linked.open.../vavai/riv/strany
  • 223;230
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ME 558), P(OC D14.30), Z(AV0Z40500505)
http://linked.open...iv/cisloPeriodika
  • 1
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 536709
http://linked.open...ai/riv/idVysledku
  • RIV/61389013:_____/05:00021679
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Light-induced phenomenapolysilane; electronic structure; photoconductivity (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • RO - Rumunsko
http://linked.open...ontrolniKodProRIV
  • [E435FDBD2532]
http://linked.open...i/riv/nazevZdroje
  • Journal of Optoelectronics and Advanced Materials
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 7
http://linked.open...iv/tvurceVysledku
  • Nešpůrek, Stanislav
  • Wang, Geng
  • Yoshino, K.
http://linked.open...n/vavai/riv/zamer
issn
  • 1454-4164
number of pages
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