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Description
  • Pulzní laserovou depoziční technikou byly připraveny GexSe1-x, x=0.22-0.28 tenké filmy. Byly studovány fotoindukční a tepelně indukční změny struktury a optické šířky. (cs)
  • Amorphous GexSe1-x, x=0.22-0.28 thin films were prepared by the pulsed-laser deposition technique. The photo-induced and thermally induced changes of structure and optical gap of the films were studied and discussed.
  • Amorphous GexSe1-x, x=0.22-0.28 thin films were prepared by the pulsed-laser deposition technique. The photo-induced and thermally induced changes of structure and optical gap of the films were studied and discussed. (en)
Title
  • Amorphous Ge-Se thin films prepared by pulsed-laser deposition
  • Amorfni Ge-Se tenké filmy připravené pulzní laserovou depozicí (cs)
  • Amorphous Ge-Se thin films prepared by pulsed-laser deposition (en)
skos:prefLabel
  • Amorphous Ge-Se thin films prepared by pulsed-laser deposition
  • Amorfni Ge-Se tenké filmy připravené pulzní laserovou depozicí (cs)
  • Amorphous Ge-Se thin films prepared by pulsed-laser deposition (en)
skos:notation
  • RIV/61389013:_____/04:00107390!RIV08-AV0-61389013
http://linked.open.../vavai/riv/strany
  • 877;885
http://linked.open...avai/riv/aktivita
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  • P(LN00A028), Z(AV0Z4050913)
http://linked.open...iv/cisloPeriodika
  • 9
http://linked.open...vai/riv/dodaniDat
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  • 554024
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  • RIV/61389013:_____/04:00107390
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  • pulsed laser deposition (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • CZ - Česká republika
http://linked.open...ontrolniKodProRIV
  • [ACE1864B8ADF]
http://linked.open...i/riv/nazevZdroje
  • Philosophical Magazine
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http://linked.open...v/svazekPeriodika
  • 84
http://linked.open...iv/tvurceVysledku
  • Frumar, M.
  • Němec, P.
  • Vlček, Milan
  • Černošek, Z.
  • Jedelský, J.
  • Štábl, M.
http://linked.open...n/vavai/riv/zamer
issn
  • 1478-6435
number of pages
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