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  • Thin amorphous films of Ge-Sb-Te were deposited from Ge2Sb2Te5 target by RF (f=13.56 MHz) magnetron sputtering in argon plasma. Composition and chemical homogeneity of target and prepared thin films were traced by Energy Dispersive X-ray Analysis coupled with Scanning Electron Microscope (SEM-EDX). SEM technique was also used for surface morphology observation. Crystallinity of target and prepared thin films was studied by X-ray Diffraction (XRD). Optical parameters of prepared thin films (spectral dependence of refractive index, optical band gap energy E-g(opt)) and film thicknesses were established via Variable Angle Spectroscopic Ellipsometry (VASE) supported by UV-Vis-NIR spectroscopy. Influence of deposition conditions (RF power, At pressure, angle divergency from normal direction) to composition, crystallinity, optical properties and deposition rate was established.
  • Thin amorphous films of Ge-Sb-Te were deposited from Ge2Sb2Te5 target by RF (f=13.56 MHz) magnetron sputtering in argon plasma. Composition and chemical homogeneity of target and prepared thin films were traced by Energy Dispersive X-ray Analysis coupled with Scanning Electron Microscope (SEM-EDX). SEM technique was also used for surface morphology observation. Crystallinity of target and prepared thin films was studied by X-ray Diffraction (XRD). Optical parameters of prepared thin films (spectral dependence of refractive index, optical band gap energy E-g(opt)) and film thicknesses were established via Variable Angle Spectroscopic Ellipsometry (VASE) supported by UV-Vis-NIR spectroscopy. Influence of deposition conditions (RF power, At pressure, angle divergency from normal direction) to composition, crystallinity, optical properties and deposition rate was established. (en)
Title
  • On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films
  • On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films (en)
skos:prefLabel
  • On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films
  • On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films (en)
skos:notation
  • RIV/61388980:_____/09:00341419!RIV10-MSM-61388980
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(GA203/06/1368), P(LC523), Z(AV0Z40320502), Z(AV0Z40500505)
http://linked.open...iv/cisloPeriodika
  • 37-42
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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http://linked.open...dnocenehoVysledku
  • 331330
http://linked.open...ai/riv/idVysledku
  • RIV/61388980:_____/09:00341419
http://linked.open...riv/jazykVysledku
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  • amorphous semiconductors; films and coatings; sputtering (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [8837BCBE38B0]
http://linked.open...i/riv/nazevZdroje
  • Journal of Non-Crystalline Solids
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 355
http://linked.open...iv/tvurceVysledku
  • Bezdička, Petr
  • Frumar, M.
  • Wágner, T.
  • Vlček, Milan
  • Hrdlička, M.
  • Gutwirth, J.
http://linked.open...ain/vavai/riv/wos
  • 000270620900037
http://linked.open...n/vavai/riv/zamer
issn
  • 0022-3093
number of pages
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