About: Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	One of the greatest issues of nanoelectronics today is how to control the heating of the components. Graphene is a promising material in this area, and it is essential to study its thermal properties. Here, the effect of heating a bilayer structure was investigated using in situ Raman spectroscopy. In order to observe the effects on each individual layer, an isotopically labeled bilayer graphene was synthesized where the two layers were composed of different carbon isotopes. Therefore, the frequency of the phonons in the Raman spectra was shifted in relation to each other. This technique was used to investigate the influence of different stacking order. It was found that in bilayer graphene grown by chemical vapor deposition (CVD), the two layers behave very similarly for both Bernal stacking and randomly oriented structures, while for transferred samples, the layers act more independently. This highlights a significant dependence on the sample preparation procedure. One of the greatest issues of nanoelectronics today is how to control the heating of the components. Graphene is a promising material in this area, and it is essential to study its thermal properties. Here, the effect of heating a bilayer structure was investigated using in situ Raman spectroscopy. In order to observe the effects on each individual layer, an isotopically labeled bilayer graphene was synthesized where the two layers were composed of different carbon isotopes. Therefore, the frequency of the phonons in the Raman spectra was shifted in relation to each other. This technique was used to investigate the influence of different stacking order. It was found that in bilayer graphene grown by chemical vapor deposition (CVD), the two layers behave very similarly for both Bernal stacking and randomly oriented structures, while for transferred samples, the layers act more independently. This highlights a significant dependence on the sample preparation procedure. (en)
Title	Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study (en)
skos:prefLabel	Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study Heating Isotopically Labeled Bernal Stacked Graphene: A Raman Spectroscopy Study (en)
skos:notation	RIV/61388955:_____/14:00434831!RIV15-AV0-61388955
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(LL1301)
http://linked.open...iv/cisloPeriodika	3
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Kalbáč, Martin Frank, Otakar Ek Weis, Johan da Costa, Sara
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ústav fyzikální chemie J. Heyrovského AV ČR, v.v.i.
http://linked.open...dnocenehoVysledku	18890
http://linked.open...ai/riv/idVysledku	RIV/61388955:_____/14:00434831
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Bernal; graphene; isotopic labeling (en)
http://linked.open.../riv/klicoveSlovo	Bernal isotopic labeling graphene
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[66F441ACD6BF]
http://linked.open...i/riv/nazevZdroje	Journal of Physical Chemistry Letters
http://linked.open...in/vavai/riv/obor	CF
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	From Graphene Hybrid Nanostructures to Green Electronics
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	5
http://linked.open...iv/tvurceVysledku	Kalbáč, Martin Frank, Otakar Ek Weis, Johan da Costa, Sara
http://linked.open...ain/vavai/riv/wos	000331153600027
issn	1948-7185
number of pages	6 (xsd:int)
http://bibframe.org/vocab/doi	10.1021/jz402681n

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