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  • Chemical vapor-deposition-grown graphene covered with a polyelectrolyte layer has been studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The doping of graphene leads to a shift of the Fermi level, which is reflected in changes of Raman spectra. A change of the Raman shift of the G band as a function of the electrode potential has been analyzed in this study to evaluate the doping level of graphene. The frequency shift of the G mode suggested an extreme doping of graphene (up 1014 charge carriers per cm2), without obvious damage of graphene.
  • Chemical vapor-deposition-grown graphene covered with a polyelectrolyte layer has been studied using Raman spectroscopy and in situ Raman spectroelectrochemistry. The doping of graphene leads to a shift of the Fermi level, which is reflected in changes of Raman spectra. A change of the Raman shift of the G band as a function of the electrode potential has been analyzed in this study to evaluate the doping level of graphene. The frequency shift of the G mode suggested an extreme doping of graphene (up 1014 charge carriers per cm2), without obvious damage of graphene. (en)
Title
  • Raman spectroscopy of strongly doped CVD-graphene
  • Raman spectroscopy of strongly doped CVD-graphene (en)
skos:prefLabel
  • Raman spectroscopy of strongly doped CVD-graphene
  • Raman spectroscopy of strongly doped CVD-graphene (en)
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  • RIV/61388955:_____/13:00421294!RIV14-MSM-61388955
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  • I, P(GAP204/10/1677), P(LL1301), V
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  • 12
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  • 101412
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  • RIV/61388955:_____/13:00421294
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  • electrochemical doping; polyelectrolyte layer; graphene (en)
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  • DE - Spolková republika Německo
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  • [EF28C264DBD6]
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  • Physica Status Solidi B-Basic Solid State Physics
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  • 250
http://linked.open...iv/tvurceVysledku
  • Kalbáč, Martin
  • Komínková, Zuzana
http://linked.open...ain/vavai/riv/wos
  • 000328325900029
issn
  • 0370-1972
number of pages
http://bibframe.org/vocab/doi
  • 10.1002/pssb.201300070
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