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  • We report the electrodeposition at room temperature (25 °C), in a potentiostatic mode, of cohesive nanocrystalline ZnO thin films from an oxygenated zinc chloride bath. It is shown that the bath saturation by molecular oxygen precursor is a key parameter to grow the oxide at low temperature. After low O2 bubbling the solution is not saturated and the surface is more or less passivated by an amorphous Zn(OH)2 veil-like thin layer. After intense and long molecular oxygen bubbling, the current density rapidly increases after an induction period of about 800 s. At the foot of the current onset, crystallized ZnO seeds appear entrapped in the initial amorphous layer. The film nucleation is a delayed process. The electrode is subsequently covered by a homogeneous ZnO film with structures of several hundreds of nanometers in length composed of nanocrystals with size of about 17 nm.
  • We report the electrodeposition at room temperature (25 °C), in a potentiostatic mode, of cohesive nanocrystalline ZnO thin films from an oxygenated zinc chloride bath. It is shown that the bath saturation by molecular oxygen precursor is a key parameter to grow the oxide at low temperature. After low O2 bubbling the solution is not saturated and the surface is more or less passivated by an amorphous Zn(OH)2 veil-like thin layer. After intense and long molecular oxygen bubbling, the current density rapidly increases after an induction period of about 800 s. At the foot of the current onset, crystallized ZnO seeds appear entrapped in the initial amorphous layer. The film nucleation is a delayed process. The electrode is subsequently covered by a homogeneous ZnO film with structures of several hundreds of nanometers in length composed of nanocrystals with size of about 17 nm. (en)
Title
  • A method for electrochemical growth of homogeneous nanocrystalline ZnO thin films at room temperature
  • A method for electrochemical growth of homogeneous nanocrystalline ZnO thin films at room temperature (en)
skos:prefLabel
  • A method for electrochemical growth of homogeneous nanocrystalline ZnO thin films at room temperature
  • A method for electrochemical growth of homogeneous nanocrystalline ZnO thin films at room temperature (en)
skos:notation
  • RIV/61388955:_____/09:00329255!RIV10-AV0-61388955
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(IAA400400909), Z(AV0Z40400503)
http://linked.open...iv/cisloPeriodika
  • 28
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 301330
http://linked.open...ai/riv/idVysledku
  • RIV/61388955:_____/09:00329255
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • electrodeposition; ZnO; room temperature; photoluminiscence (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV
  • [88042E49CDAB]
http://linked.open...i/riv/nazevZdroje
  • Electrochimica acta
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 54
http://linked.open...iv/tvurceVysledku
  • Jirka, Ivan
  • Pauporté, T.
http://linked.open...ain/vavai/riv/wos
  • 000271151600060
http://linked.open...n/vavai/riv/zamer
issn
  • 0013-4686
number of pages
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