About: Si ohmic contacts on N-type SiC studied by XPS

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About: Si ohmic contacts on N-type SiC studied by XPS Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://dx.doi.org/10.1016/j.mee.2012.12.019
Description	Si ohmic contacts on N-type 4H- and 6H-SiC with contact resistivity comparable with Ni metallizations were prepared. After etching-off of the Si contacts and deposition of new, unannealed ones, good electrical parameters of the original contacts remain preserved. Such unannealed secondary contacts were already successfully created with original Ni or Ni silicide metallizations. An advantage offered by the secondary contacts prepared after the original Si contacts is that they are prepared on a high-quality SiC surface as the original Si does not react with SiC. XPS and AFM analyses were carried out. Under the original Si contacts when they are etched-off there is observed a shift of Si and C peaks to higher binding energies in comparison with a clean, bare SiC surface. After less than 2 nm of the surface layer is sputtered-off the shift disappears. We suggest that preserved electrical parameters after the etching-off of the Si contacts stem from a SiC surface modification. Si ohmic contacts on N-type 4H- and 6H-SiC with contact resistivity comparable with Ni metallizations were prepared. After etching-off of the Si contacts and deposition of new, unannealed ones, good electrical parameters of the original contacts remain preserved. Such unannealed secondary contacts were already successfully created with original Ni or Ni silicide metallizations. An advantage offered by the secondary contacts prepared after the original Si contacts is that they are prepared on a high-quality SiC surface as the original Si does not react with SiC. XPS and AFM analyses were carried out. Under the original Si contacts when they are etched-off there is observed a shift of Si and C peaks to higher binding energies in comparison with a clean, bare SiC surface. After less than 2 nm of the surface layer is sputtered-off the shift disappears. We suggest that preserved electrical parameters after the etching-off of the Si contacts stem from a SiC surface modification. (en)
Title	Si ohmic contacts on N-type SiC studied by XPS Si ohmic contacts on N-type SiC studied by XPS (en)
skos:prefLabel	Si ohmic contacts on N-type SiC studied by XPS Si ohmic contacts on N-type SiC studied by XPS (en)
skos:notation	RIV/60461373:22810/13:43895685!RIV14-GA0-22810___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GAP108/11/0894)
http://linked.open...iv/cisloPeriodika	JUN 2013
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Kudrnová, Marie
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Rektorát
http://linked.open...dnocenehoVysledku	104994
http://linked.open...ai/riv/idVysledku	RIV/60461373:22810/13:43895685
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Secondary contacts; Silicon; XPS; Contacts; Ohmic; Silicon carbide (en)
http://linked.open.../riv/klicoveSlovo	Ohmic Secondary contacts Silicon Silicon carbide Contacts XPS
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[E3F7DF09D1F1]
http://linked.open...i/riv/nazevZdroje	Microelectronic Engineering
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Growth and processing of graphene layers on silicon carbide
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	106
http://linked.open...iv/tvurceVysledku	Cichoň, Stanislav Macháč, Petr Barda, Bohumil Kudrnová, Marie
http://linked.open...ain/vavai/riv/wos	000319545500026
issn	0167-9317
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.mee.2012.12.019
http://localhost/t...ganizacniJednotka	22810

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