About: Thermal degradation of Ni-based Schottky contacts on 6H-SiC

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We prepared Ni and Ni(2)Si Schottky contacts on lightly doped (5.5 x 10(15) cm(-3)) n-type 6H-SiC and evaluated their thermal degradation after annealing in the temperature range of 750-1150 degrees C. Ni contacts had Schottky behavior after annealing at 750 and 850 degrees C; they gradually degraded at 960 and 1065 degrees C, and achieved ohmic behavior at 1150 degrees C. Ni(2)Si contacts had higher values of saturation current density and lower Schottky barrier heights than Ni contacts after annealing at 750 and 850 degrees C, and an abrupt transition from Schottky behavior at 850 degrees C to ohmic behavior at 960 degrees C. We assume that the abrupt transition from Schottky to ohmic behavior in the case of Ni(2)Si metallization is caused by its low reactivity with silicon carbide, which was verified by XPS depth profiling. The results indicate that the discrepancy in the behavior of Ni contacts on lightly doped SiC reported in the literature might have been caused by non-equal processing or by inaccurate determination of the annealing temperature. We prepared Ni and Ni(2)Si Schottky contacts on lightly doped (5.5 x 10(15) cm(-3)) n-type 6H-SiC and evaluated their thermal degradation after annealing in the temperature range of 750-1150 degrees C. Ni contacts had Schottky behavior after annealing at 750 and 850 degrees C; they gradually degraded at 960 and 1065 degrees C, and achieved ohmic behavior at 1150 degrees C. Ni(2)Si contacts had higher values of saturation current density and lower Schottky barrier heights than Ni contacts after annealing at 750 and 850 degrees C, and an abrupt transition from Schottky behavior at 850 degrees C to ohmic behavior at 960 degrees C. We assume that the abrupt transition from Schottky to ohmic behavior in the case of Ni(2)Si metallization is caused by its low reactivity with silicon carbide, which was verified by XPS depth profiling. The results indicate that the discrepancy in the behavior of Ni contacts on lightly doped SiC reported in the literature might have been caused by non-equal processing or by inaccurate determination of the annealing temperature. (en)
Title	Thermal degradation of Ni-based Schottky contacts on 6H-SiC Thermal degradation of Ni-based Schottky contacts on 6H-SiC (en)
skos:prefLabel	Thermal degradation of Ni-based Schottky contacts on 6H-SiC Thermal degradation of Ni-based Schottky contacts on 6H-SiC (en)
skos:notation	RIV/60461373:22810/11:43892440!RIV12-MSM-22810___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	9
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Kudrnová, Marie
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Rektorát
http://linked.open...dnocenehoVysledku	235155
http://linked.open...ai/riv/idVysledku	RIV/60461373:22810/11:43892440
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Low doping level; Ohmic contact; Schottky diode; Nickel silicide; Nickel; SiC (en)
http://linked.open.../riv/klicoveSlovo	Ohmic contact Low doping level Nickel silicide Schottky diode Nickel SiC
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[6B2AF3C9F811]
http://linked.open...i/riv/nazevZdroje	Applied Surface Science
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	257
http://linked.open...iv/tvurceVysledku	Cichoň, Stanislav Macháč, Petr Barda, Bohumil Kudrnová, Marie
http://linked.open...ain/vavai/riv/wos	000286459600100
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	0169-4332
number of pages	4 (xsd:int)
http://bibframe.org/vocab/doi	10.1016/j.apsusc.2010.12.077
http://localhost/t...ganizacniJednotka	22810

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