About: Reduction of skin effect losses in double-level-T-gate structure

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://scitation.aip.org/content/aip/journal/apl/105/23/10.1063/1.4903468
Description	We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L-g = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 mu m gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f(max) value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions. We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L-g = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 mu m gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f(max) value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions. (en)
Title	Reduction of skin effect losses in double-level-T-gate structure Reduction of skin effect losses in double-level-T-gate structure (en)
skos:prefLabel	Reduction of skin effect losses in double-level-T-gate structure Reduction of skin effect losses in double-level-T-gate structure (en)
skos:notation	RIV/60461373:22310/14:43897455!RIV15-GA0-22310___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GA13-20507S)
http://linked.open...iv/cisloPeriodika	23
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	41724
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/14:43897455
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	HEMTS; PERFORMANCE; FIELD-EFFECT TRANSISTORS (en)
http://linked.open.../riv/klicoveSlovo	FIELD-EFFECT TRANSISTORS PERFORMANCE HEMTS
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[1E9C950E691A]
http://linked.open...i/riv/nazevZdroje	Applied Physics Letters
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	13 (xsd:int)
http://linked.open...vavai/riv/projekt	Tenké vrstvy magneticky dopovaného GaN
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	105
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Kordoš, Peter Mikulics, Martin Novák, Jozef Fox, Alfred Hardtdegen, Hilde Marso, Michel Adam, Roman Stanček, Stanislav Gregušová, Dagmar Grützmacher, Detlev Arango, Y.C. Juul, Lars
http://linked.open...ain/vavai/riv/wos	000346266000044
issn	0003-6951
number of pages	1 (xsd:int)
http://bibframe.org/vocab/doi	10.1063/1.4903468
http://localhost/t...ganizacniJednotka	22310

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