About: Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Ni suicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structure were ohmic with low contact resistivity approximately 8 x 10(-4) Omega cm(2) after annealing at 960 degrees C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070 degrees C to see ohmic behavior appearing with resistivities reaching 8 x 10(-3) Omega cm(2) and this was valid only for Ni end Ni(2)Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is expected to be overcome for example with a covering layer. Ni suicides contacts, which are expected to be advantageous contact materials on SiC, were tested in this work. Prepared contact structure were ohmic with low contact resistivity approximately 8 x 10(-4) Omega cm(2) after annealing at 960 degrees C as far as the SiC substrate with a medium doping level was concerned, no matter whether Ni or Ni silicides were used. At lower annealing temperatures, only Schottky behavior was observed by means of I-V characteristics measurements. In the case of SiC substrate with a low doping level, the behavior differed. It was necessary to anneal the structures at 1070 degrees C to see ohmic behavior appearing with resistivities reaching 8 x 10(-3) Omega cm(2) and this was valid only for Ni end Ni(2)Si. Raman spectroscopy measurements confirmed formation of single Ni silicides as expected. It was found that Ni silicides can keep as good resistivity as Ni contacts while they interact with SiC in limited way and their undesirable drop-like morphology is expected to be overcome for example with a covering layer. (en)
Title	Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level (en)
skos:prefLabel	Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level Ni and Ni silicide ohmic contacts on N-type 6H-SiC with medium and low doping level (en)
skos:notation	RIV/60461373:22310/11:43892465!RIV12-MSM-22310___
http://linked.open...avai/riv/aktivita	S
http://linked.open...avai/riv/aktivity	S
http://linked.open...iv/cisloPeriodika	1
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Macháč, Petr Cichoň, Stanislav
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	216017
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/11:43892465
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Raman; silicide; ohmic contact; Silicon carbide (en)
http://linked.open.../riv/klicoveSlovo	Silicon carbide ohmic contact Raman silicide
http://linked.open...odStatuVydavatele	CZ - Česká republika
http://linked.open...ontrolniKodProRIV	[13D033EF57C9]
http://linked.open...i/riv/nazevZdroje	Radioengineering
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...UplatneniVysledku	2011
http://linked.open...v/svazekPeriodika	20
http://linked.open...iv/tvurceVysledku	Cichoň, Stanislav Macháč, Petr Barda, Bohumil
http://linked.open...ain/vavai/riv/wos	000289657400006
issn	1210-2512
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	22310

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 48 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software