Attributes | Values |
---|
rdf:type
| |
Description
| - A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750?1150°C. Structures Ti(2)/Ni(50) and Ti(100)/Ni(50) showed the lowest contact resistivity, 2x10-4 cm2 in both cases. For the Ti(2)/Ni(50) structure, low contact resistivity was reached most likely due to reduction of surface oxides on SiC by the thin titanium layer. In the Ti(100)/Ni(50) structure, the titanium layer prevents diffusion of nickel towards SiC and there is a layer containing mainly TiC at the interface with silicon carbide.
- A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750?1150°C. Structures Ti(2)/Ni(50) and Ti(100)/Ni(50) showed the lowest contact resistivity, 2x10-4 cm2 in both cases. For the Ti(2)/Ni(50) structure, low contact resistivity was reached most likely due to reduction of surface oxides on SiC by the thin titanium layer. In the Ti(100)/Ni(50) structure, the titanium layer prevents diffusion of nickel towards SiC and there is a layer containing mainly TiC at the interface with silicon carbide. (en)
|
Title
| - Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC
- Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC (en)
|
skos:prefLabel
| - Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC
- Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC (en)
|
skos:notation
| - RIV/60461373:22310/10:00023030!RIV11-MSM-22310___
|
http://linked.open...avai/riv/aktivita
| |
http://linked.open...avai/riv/aktivity
| |
http://linked.open...iv/cisloPeriodika
| |
http://linked.open...vai/riv/dodaniDat
| |
http://linked.open...aciTvurceVysledku
| |
http://linked.open.../riv/druhVysledku
| |
http://linked.open...iv/duvernostUdaju
| |
http://linked.open...titaPredkladatele
| |
http://linked.open...dnocenehoVysledku
| |
http://linked.open...ai/riv/idVysledku
| - RIV/60461373:22310/10:00023030
|
http://linked.open...riv/jazykVysledku
| |
http://linked.open.../riv/klicovaSlova
| - Ohmic contact; silicon carbide; nickel; titanium, sputtering; XPS analysis (en)
|
http://linked.open.../riv/klicoveSlovo
| |
http://linked.open...odStatuVydavatele
| |
http://linked.open...ontrolniKodProRIV
| |
http://linked.open...i/riv/nazevZdroje
| - Microelectronic Engineering
|
http://linked.open...in/vavai/riv/obor
| |
http://linked.open...ichTvurcuVysledku
| |
http://linked.open...cetTvurcuVysledku
| |
http://linked.open...UplatneniVysledku
| |
http://linked.open...v/svazekPeriodika
| |
http://linked.open...iv/tvurceVysledku
| - Barda, Bohumil
- Machač, Petr
- Kudrnová Roz.hubičková, Marie
|
http://linked.open...ain/vavai/riv/wos
| |
http://linked.open...n/vavai/riv/zamer
| |
issn
| |
number of pages
| |
http://localhost/t...ganizacniJednotka
| |