About: Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC     Goto   Sponge   NotDistinct   Permalink

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  • A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750?1150°C. Structures Ti(2)/Ni(50) and Ti(100)/Ni(50) showed the lowest contact resistivity, 2x10-4 cm2 in both cases. For the Ti(2)/Ni(50) structure, low contact resistivity was reached most likely due to reduction of surface oxides on SiC by the thin titanium layer. In the Ti(100)/Ni(50) structure, the titanium layer prevents diffusion of nickel towards SiC and there is a layer containing mainly TiC at the interface with silicon carbide.
  • A set of Ti/Ni metallizations with different thickness of the underlying titanium layer was prepared on 6H-SiC together with structures that contained only pure Ti and Ni. Samples were gradually annealed at 750?1150°C. Structures Ti(2)/Ni(50) and Ti(100)/Ni(50) showed the lowest contact resistivity, 2x10-4 cm2 in both cases. For the Ti(2)/Ni(50) structure, low contact resistivity was reached most likely due to reduction of surface oxides on SiC by the thin titanium layer. In the Ti(100)/Ni(50) structure, the titanium layer prevents diffusion of nickel towards SiC and there is a layer containing mainly TiC at the interface with silicon carbide. (en)
Title
  • Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC
  • Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC (en)
skos:prefLabel
  • Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC
  • Role of titanium in Ti/Ni ohmic contact on N-type 6H-SiC (en)
skos:notation
  • RIV/60461373:22310/10:00023030!RIV11-MSM-22310___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika
  • 3
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
http://linked.open.../riv/druhVysledku
http://linked.open...iv/duvernostUdaju
http://linked.open...titaPredkladatele
http://linked.open...dnocenehoVysledku
  • 285774
http://linked.open...ai/riv/idVysledku
  • RIV/60461373:22310/10:00023030
http://linked.open...riv/jazykVysledku
http://linked.open.../riv/klicovaSlova
  • Ohmic contact; silicon carbide; nickel; titanium, sputtering; XPS analysis (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [973368BAE889]
http://linked.open...i/riv/nazevZdroje
  • Microelectronic Engineering
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 87
http://linked.open...iv/tvurceVysledku
  • Barda, Bohumil
  • Machač, Petr
  • Kudrnová Roz.hubičková, Marie
http://linked.open...ain/vavai/riv/wos
  • 000275221600009
http://linked.open...n/vavai/riv/zamer
issn
  • 0167-9317
number of pages
http://localhost/t...ganizacniJednotka
  • 22310
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