About: Improvement of Ni/Si/4H-SiC ohmic contacts by VLS grown subcontact layer

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About: Improvement of Ni/Si/4H-SiC ohmic contacts by VLS grown subcontact layer Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	This work presents results of using VLS epitaxial SiGe-type structure as a sub-contact layer designated for Ni/Si ohmic contacts. The epitaxial growth was performed at 1240 and 1414°C in various types of atmosphere in a processing chamber. The prepared layers had mostly smooth surface. XPS analysis showed that germanium escape from the structure occurred during the process of the epitaxial growth. An important result is that silicon and carbon bind in the form of SiC already at the surface of the structure, which proves silicon carbide formation during the epitaxial growth. Ni/Si-type contact metallization was deposited onto all epitaxial structures. After annealing we received ohmic contacts with contact resistivity equal or lower compared to the standard contact structure Ni/Si/SiC prepared on the same substrate. The best value of contact resistivity was 4x10-5 cm2. The doping concentration in the VLS epitaxial layers is reaching the value (6-7)x1018 cm-3. This work presents results of using VLS epitaxial SiGe-type structure as a sub-contact layer designated for Ni/Si ohmic contacts. The epitaxial growth was performed at 1240 and 1414°C in various types of atmosphere in a processing chamber. The prepared layers had mostly smooth surface. XPS analysis showed that germanium escape from the structure occurred during the process of the epitaxial growth. An important result is that silicon and carbon bind in the form of SiC already at the surface of the structure, which proves silicon carbide formation during the epitaxial growth. Ni/Si-type contact metallization was deposited onto all epitaxial structures. After annealing we received ohmic contacts with contact resistivity equal or lower compared to the standard contact structure Ni/Si/SiC prepared on the same substrate. The best value of contact resistivity was 4x10-5 cm2. The doping concentration in the VLS epitaxial layers is reaching the value (6-7)x1018 cm-3. (en)
Title	Improvement of Ni/Si/4H-SiC ohmic contacts by VLS grown subcontact layer Improvement of Ni/Si/4H-SiC ohmic contacts by VLS grown subcontact layer (en)
skos:prefLabel	Improvement of Ni/Si/4H-SiC ohmic contacts by VLS grown subcontact layer Improvement of Ni/Si/4H-SiC ohmic contacts by VLS grown subcontact layer (en)
skos:notation	RIV/60461373:22310/10:00022999!RIV11-MSM-22310___
http://linked.open...avai/riv/aktivita	S Z
http://linked.open...avai/riv/aktivity	S, Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	12
http://linked.open...vai/riv/dodaniDat	2011
http://linked.open...aciTvurceVysledku	Macháč, Petr Barda, Bohumil
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	263189
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/10:00022999
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	VLS epitaxy; ohmic contact; Silicon carbide; nickel (en)
http://linked.open.../riv/klicoveSlovo	Silicon carbide ohmic contact nickel VLS epitaxy
http://linked.open...odStatuVydavatele	NL - Nizozemsko
http://linked.open...ontrolniKodProRIV	[DFB167FDD62E]
http://linked.open...i/riv/nazevZdroje	Microelectronic Engineering
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2010
http://linked.open...v/svazekPeriodika	87
http://linked.open...iv/tvurceVysledku	Barda, Bohumil Machač, Petr
http://linked.open...ain/vavai/riv/wos	000282206100009
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	0167-9317
number of pages	5 (xsd:int)
http://localhost/t...ganizacniJednotka	22310

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