About: Effects of Si interlayer on nickel and platinum ohmic contacts for n-type SiC

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Ni and Pt are common contact materials for n-type and p-type of silicon carbide, respectively. As deposited metals have to be annealed at least at 950C. Both metals react with SiC and silicides are created as a result; thus a certain region of subcontact SiC is decomposed. The mentioned reaction destroys semiconductor material under an ohmic contact and thus can influence behavior of the whole semiconductor structure. A silicon layer inserted in the metallization can reduce reactions of metals with SiC and minimize the decomposition of SiC. The aim of the contribution is testing of Si interlayer on electrical parameters of Ni/SiC and Pt/SiC structures. Both metallizations are prepared on n-type of SiC. Ni and Pt are common contact materials for n-type and p-type of silicon carbide, respectively. As deposited metals have to be annealed at least at 950C. Both metals react with SiC and silicides are created as a result; thus a certain region of subcontact SiC is decomposed. The mentioned reaction destroys semiconductor material under an ohmic contact and thus can influence behavior of the whole semiconductor structure. A silicon layer inserted in the metallization can reduce reactions of metals with SiC and minimize the decomposition of SiC. The aim of the contribution is testing of Si interlayer on electrical parameters of Ni/SiC and Pt/SiC structures. Both metallizations are prepared on n-type of SiC. (en)
Title	Effects of Si interlayer on nickel and platinum ohmic contacts for n-type SiC Effects of Si interlayer on nickel and platinum ohmic contacts for n-type SiC (en)
skos:prefLabel	Effects of Si interlayer on nickel and platinum ohmic contacts for n-type SiC Effects of Si interlayer on nickel and platinum ohmic contacts for n-type SiC (en)
skos:notation	RIV/60461373:22310/09:00021587!RIV10-MSM-22310___
http://linked.open...avai/riv/aktivita	Z
http://linked.open...avai/riv/aktivity	Z(MSM6046137302)
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Macháč, Petr
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	312440
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/09:00021587
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	SiC; Silicon; Platinum; Nickel; Silicide (en)
http://linked.open.../riv/klicoveSlovo	Silicon Nickel Platinum SiC Silicide
http://linked.open...ontrolniKodProRIV	[67A45C82C25C]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	Proceedings ISSE 2009 32nd International Spring Seminar on Electronics Technology
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Barda, Bohumil Machač, Petr
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2009-05-13 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Vysoké učení technické v Brně
https://schema.org/isbn	978-1-4244-4260-7
http://localhost/t...ganizacniJednotka	22310

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