About: Ni-based ohmic contacts on 4H-SiC of n-type

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevente We directly compared three nickel-based metallizations on Si-face of n-type 4H-SiC: pure nickel and nickel silicides prepared by the evaporation of nickel and silicon layers with overall composition corresponding to NiSi and Ni2Si. The degree of interaction between the metallizations and silicon carbide was determined by the AFM (Atomic Force Microscopy) scanning of the SiC substrate after the selective etching of the metallizations. The optimal annealing temperature was 960°C for all the metallizations; the values of contact resistivity were 6?7x10-5 cm2. The morphology of Ni (50 nm) contacts was free of defects at all annealing temperatures, but the reaction during annealing consumed approximately 60 nm of SiC. NiSi and Ni2Si metallizations altered the surface of the SiC substrate, but no significant decomposition was detected by AFM. NiSi contacts had unsatisfactory droplet-like morphology after annealing at 960 and 1065°C. Annealed Ni2Si contacts contained pores, but their formation was prevente (en)
Title	Ni-based ohmic contacts on 4H-SiC of n-type Ni-based ohmic contacts on 4H-SiC of n-type (en)
skos:prefLabel	Ni-based ohmic contacts on 4H-SiC of n-type Ni-based ohmic contacts on 4H-SiC of n-type (en)
skos:notation	RIV/60461373:22310/09:00021577!RIV10-MSM-22310___
http://linked.open...avai/riv/aktivita	S
http://linked.open...avai/riv/aktivity	S
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Macháč, Petr
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	329557
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/09:00021577
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	4H-SiC; Ohmic contacts; Nickel; AFM (en)
http://linked.open.../riv/klicoveSlovo	Ohmic contacts 4H-SiC AFM Nickel
http://linked.open...ontrolniKodProRIV	[80F40D8D19B2]
http://linked.open...v/mistoKonaniAkce	Brno
http://linked.open...i/riv/mistoVydani	Brno
http://linked.open...i/riv/nazevZdroje	Proceedings Electronic Devices and Systems IMAPS CS International Conference 2009
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	2 (xsd:int)
http://linked.open...UplatneniVysledku	2009
http://linked.open...iv/tvurceVysledku	Barda, Bohumil Machač, Petr
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2009-09-02 (xsd:date)
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Vysoké učení technické v Brně
https://schema.org/isbn	978-80-214-3933-7
http://localhost/t...ganizacniJednotka	22310

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