About: Růst a charakterizace vrstev GaN:Mn metodou MOVPE

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Růst a charakterizace vrstev GaN:Mn metodou MOVPE In this paper we present a growth of Ga1-xMnxN layers by metalorganic vapor-phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga1-xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 °C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase. (en) Růst a charakterizace vrstev GaN:Mn metodou MOVPE (cs)
Title	Růst a charakterizace vrstev GaN:Mn metodou MOVPE Growth and Characterization of GaN:Mn layers by MOVPE (en) Růst a charakterizace vrstev GaN:Mn metodou MOVPE (cs)
skos:prefLabel	Růst a charakterizace vrstev GaN:Mn metodou MOVPE Growth and Characterization of GaN:Mn layers by MOVPE (en) Růst a charakterizace vrstev GaN:Mn metodou MOVPE (cs)
skos:notation	RIV/60461373:22310/08:00020065!RIV09-MSM-22310___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA104/06/0642), Z(MSM6046137302)
http://linked.open...vai/riv/dodaniDat	2009
http://linked.open...aciTvurceVysledku	Sedmidubský, David Stejskal, Josef Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	393591
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/08:00020065
http://linked.open...riv/jazykVysledku	cze - čeština
http://linked.open.../riv/klicovaSlova	Metalorganic vapor-phase epitaxy; Nitrides; Magnetic materials; Semiconducting III?V materials (en)
http://linked.open.../riv/klicoveSlovo	Nitrides Magnetic materials Metalorganic vapor-phase epitaxy Semiconducting III?V materials
http://linked.open...ontrolniKodProRIV	[56838C38C5AB]
http://linked.open...v/mistoKonaniAkce	Hnanice, ČR
http://linked.open...i/riv/mistoVydani	Praha
http://linked.open...i/riv/nazevZdroje	DMSRE, 18th joint seminar proceedings
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	3 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications
http://linked.open...UplatneniVysledku	2008
http://linked.open...iv/tvurceVysledku	Havránek, Vladimír Macková, Anna Sofer, Zdeněk Maryško, Miroslav Sedmidubský, David Stejskal, Josef Hejtmánek, Jiří Jurek, Karel Václavů, Michal
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2008-09-02 (xsd:date)
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
number of pages	3 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Akademie věd České republiky
https://schema.org/isbn	978-80-254-0864-3
http://localhost/t...ganizacniJednotka	22310

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