About: Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE

Facets (new session)
Description
Metadata
Settings
- owl:sameAs
- Inference Rule:

About: Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

Attributes	Values
rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr. On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr. (en) On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr. (cs)
Title	Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE (en) Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE (cs)
skos:prefLabel	Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE (en) Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE (cs)
skos:notation	RIV/60461373:22310/07:00018272!RIV08-MSM-22310___
http://linked.open.../vavai/riv/strany	79-84
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA104/06/0642), Z(MSM6046137302)
http://linked.open...vai/riv/dodaniDat	2008
http://linked.open...aciTvurceVysledku	Leitner, Jindřich Sedmidubský, David Stejskal, Josef Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	454728
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/07:00018272
http://linked.open...riv/jazykVysledku	cze - čeština
http://linked.open.../riv/klicovaSlova	GaN; dilute magnetic semiconductors; spintronics; thermodynamics (en)
http://linked.open.../riv/klicoveSlovo	thermodynamics GaN spintronics dilute magnetic semiconductors
http://linked.open...ontrolniKodProRIV	[06BF53D8B073]
http://linked.open...i/riv/mistoVydani	Plzeň
http://linked.open...i/riv/nazevZdroje	Sborník příspěvků VI. ročníku konference Vrstvy a povlaky 2007
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications
http://linked.open...UplatneniVysledku	2007
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Leitner, Jindřich Sedmidubský, David Stejskal, Josef
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
number of pages	5 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Digital Graphic
https://schema.org/isbn	978-80-969310-4-0
http://localhost/t...ganizacniJednotka	22310

Faceted Search & Find service v1.16.118 as of Jun 21 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 07.20.3240 as of Jun 21 2024, on Linux (x86_64-pc-linux-gnu), Single-Server Edition (126 GB total memory, 29 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software