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Description
| - On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr.
- On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr. (en)
- On the basis of thermodynamic analysis of the Ga-Cr-N-C-H system, feasible conditions for the deposition of GaN:Cr epitaxial layers by MOVPE are discussed. The analysis was performed in the temperature range of 800 - 1100 °C at pressures ranging from 10 to 100 kPa for various input gas phase compositions. Solid (bcc) and liquid Cr-Ga solution, solid nitride (Ga,Cr)N as well as 12 single-species solid phases were considered to coexist in equilibrium with the gas phase. Initial conditions - temperature, pressure and input gas phase in the system and the content of Cr can be simply controlled by Cr concentration in the surrounding atmosphere. These conditions are supposed to be suitable for the deposition of high quality epitaxial layers of GaN:Cr. (cs)
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Title
| - Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE
- Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE (en)
- Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE (cs)
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skos:prefLabel
| - Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE
- Thermodynamic aspects of GaN:Cr epitaxial layers grown by MOVPE (en)
- Termodynamické aspekty přípravy epitaxních vrstev GaN:Cr metodou MOVPE (cs)
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skos:notation
| - RIV/60461373:22310/07:00018272!RIV08-MSM-22310___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA104/06/0642), Z(MSM6046137302)
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/60461373:22310/07:00018272
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - GaN; dilute magnetic semiconductors; spintronics; thermodynamics (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/mistoVydani
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http://linked.open...i/riv/nazevZdroje
| - Sborník příspěvků VI. ročníku konference Vrstvy a povlaky 2007
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Sofer, Zdeněk
- Leitner, Jindřich
- Sedmidubský, David
- Stejskal, Josef
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http://linked.open...n/vavai/riv/zamer
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number of pages
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http://purl.org/ne...btex#hasPublisher
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https://schema.org/isbn
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http://localhost/t...ganizacniJednotka
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