About: Effect of carrier gas on GaN epilayer characteristics

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved. Metalorganic vapor phase epitaxy (MOVPE) of GaN was performed using hydrogen (H2), nitrogen (N2) and H2/N2mixtures thereof as the carrier gas in the high temperature buffer growth range. The effect of carrier gas on the structural and morphological characteristics of the epilayers was systematically studied using interference and atomic force microscopy (AFM), photoluminescence (PL) measurements at 2 K, Raman spectroscopy and X-ray diffraction (XRD). The higher the N2 content in the carrier gas, the more pinholes are observed, the lower compressive strain and the higher dislocation density in the layers. A carrier gas composition range was defined at which GaN layers with acceptable structural and morphological characteristics are achieved. (en)
Title	Effect of carrier gas on GaN epilayer characteristics Effect of carrier gas on GaN epilayer characteristics (en)
skos:prefLabel	Effect of carrier gas on GaN epilayer characteristics Effect of carrier gas on GaN epilayer characteristics (en)
skos:notation	RIV/60461373:22310/06:00022515!RIV10-MSM-22310___
http://linked.open...avai/riv/aktivita	S
http://linked.open...avai/riv/aktivity	S
http://linked.open...iv/cisloPeriodika	6
http://linked.open...vai/riv/dodaniDat	2010
http://linked.open...aciTvurceVysledku	Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	472978
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/06:00022515
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Gallium nitride; epitaxy; growth; carrier gas (en)
http://linked.open.../riv/klicoveSlovo	epitaxy carrier gas growth Gallium nitride
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[5EA009FB9222]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi (c)
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	7 (xsd:int)
http://linked.open...UplatneniVysledku	2006
http://linked.open...v/svazekPeriodika	3
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Hardtdegen, Hilde Cho, Yong Suk Kaluza, Nicoleta Steins, Roger Thillosen, Nicolas Luth, Heinz
http://linked.open...ain/vavai/riv/wos	000239543600008
issn	1610-1634
number of pages	4 (xsd:int)
http://localhost/t...ganizacniJednotka	22310

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