About: GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	V této práci se zabýváme přípravou epitaxních vrstev GaN a teoretickými výpočty pásové struktury GaN:Mn. Rovnovážná rozpustnost Mn v GaN bylo vypočteno pomocí ab-initio metod z elektronové struktury. (cs) The main focus of this work concerns the material, technological and some theoretical aspects of dilute magnetic semiconductors (DMS) based on the transition metal doped GaN thin film. The epitaxial thin layers of GaN with wurtzite structure was deposited by MOVPE technique on monocrystaline c-plane sappphire substrates at temperatures 1000 - 1100oC. The gaseous metalorganic precursors Ga(CH3)3 and amonia were used as sources of the components. Due to a relatively large lattice mismatch between Al2O3 and GaN a short accommodation period at 550oC characterized by a deposition of a polycrystalline buffer layers of GaN was included prior to the epitaxial growth. The prepared epitaxial layers were examined by means X-ray diffraction, scanning electron microscopy (SEM),atomic force microscopy (AFM),electron microprobe analysis (EMA). As a theoretical tool for the prediction of appropriate deposition conditions of GaN:Mn epitaxial layers in situ, calculations of equilibrium solubility limits o The main focus of this work concerns the material, technological and some theoretical aspects of dilute magnetic semiconductors (DMS) based on the transition metal doped GaN thin film. The epitaxial thin layers of GaN with wurtzite structure was deposited by MOVPE technique on monocrystaline c-plane sappphire substrates at temperatures 1000 - 1100oC. The gaseous metalorganic precursors Ga(CH3)3 and amonia were used as sources of the components. Due to a relatively large lattice mismatch between Al2O3 and GaN a short accommodation period at 550oC characterized by a deposition of a polycrystalline buffer layers of GaN was included prior to the epitaxial growth. The prepared epitaxial layers were examined by means X-ray diffraction, scanning electron microscopy (SEM),atomic force microscopy (AFM),electron microprobe analysis (EMA). As a theoretical tool for the prediction of appropriate deposition conditions of GaN:Mn epitaxial layers in situ, calculations of equilibrium solubility limits o (en)
Title	GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS (en) GaN:Mn tenké epitaxní vrstvy pro aplikace ve spintronice (cs)
skos:prefLabel	GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS GaN:Mn THIN EPITAXIAL LAYERS FOR SPINTRONIC APPLICATIONS (en) GaN:Mn tenké epitaxní vrstvy pro aplikace ve spintronice (cs)
skos:notation	RIV/60461373:22310/06:00017021!RIV07-GA0-22310___
http://linked.open.../vavai/riv/strany	128-131
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(GA104/06/0642)
http://linked.open...vai/riv/dodaniDat	2007
http://linked.open...aciTvurceVysledku	Leitner, Jindřich Sedmidubský, David Strejc, Aleš Stejskal, Josef Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	476703
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/06:00017021
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaN; epitaxial layers; spintronic; electronic structure; ab-initio (en)
http://linked.open.../riv/klicoveSlovo	electronic structure epitaxial layers spintronic ab-initio GaN
http://linked.open...ontrolniKodProRIV	[3EF13B165AE0]
http://linked.open...v/mistoKonaniAkce	Rožkov pod Radhoštěm
http://linked.open...i/riv/mistoVydani	Trenčín
http://linked.open...i/riv/nazevZdroje	Zborník prednášok Vrstvy a povlaky 2006
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	5 (xsd:int)
http://linked.open...cetTvurcuVysledku	5 (xsd:int)
http://linked.open...vavai/riv/projekt	Thin Films of Magnetically Doped A(iii)N Semiconductors for Spin Electronics Applications
http://linked.open...UplatneniVysledku	2006
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Leitner, Jindřich Sedmidubský, David Stejskal, Josef Strejc, Aleš
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2006-10-10 (xsd:date)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Digital Graphic
https://schema.org/isbn	80-969310-2-4
http://localhost/t...ganizacniJednotka	22310

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