About: Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	Usually, in the MOVPE of group III nitrides, the group III and ammonia are injected separately into the reactor in order to prevent pre-reactions. The group V is injected closer to the heated substrate to increase the group V concentration near the substrate surface. We however have inverted the source gas supply in order to reduce parasitic deposition and to increase reactor uptimes and process efficiency [1]. However it is quite clear, that growth optimization with respect to uniformity needs a different strategy if the inlet geometry is changed [2]. Basically the uniformity is determined by the convective flow of the growth determining species into the reactor and the diffusive flow towards the substrate. In a horizontal reactor forced convection takes place parallel to the substrate surface and diffusion perpendicular to it. Using this knowledge, the optimization of the conventional process with respect to uniformity was already carried out [3]. In this paper we will present the optimization for t Usually, in the MOVPE of group III nitrides, the group III and ammonia are injected separately into the reactor in order to prevent pre-reactions. The group V is injected closer to the heated substrate to increase the group V concentration near the substrate surface. We however have inverted the source gas supply in order to reduce parasitic deposition and to increase reactor uptimes and process efficiency [1]. However it is quite clear, that growth optimization with respect to uniformity needs a different strategy if the inlet geometry is changed [2]. Basically the uniformity is determined by the convective flow of the growth determining species into the reactor and the diffusive flow towards the substrate. In a horizontal reactor forced convection takes place parallel to the substrate surface and diffusion perpendicular to it. Using this knowledge, the optimization of the conventional process with respect to uniformity was already carried out [3]. In this paper we will present the optimization for t (en) Optimalizace vysokoteplotního růstu GaN užitím N2 jako nosného plynu (cs)
Title	Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas (en) Optimalizace vysokoteplotního růstu GaN užitím N2 jako nosného plynu (cs)
skos:prefLabel	Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas Poster: Optimisation of GaN high-temperature growth using N2 as carrier gas (en) Optimalizace vysokoteplotního růstu GaN užitím N2 jako nosného plynu (cs)
skos:notation	RIV/60461373:22310/05:00014149!RIV06-MSM-22310___
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA104/03/0387), Z(MSM6046137302)
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	O - Ostatní výsledky nezařaditelné do žádného z výše uvedených druhů výsledku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	537093
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/05:00014149
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaN; MOVPE; Růst; Dusík; Nosný plyn (en)
http://linked.open.../riv/klicoveSlovo	MOVPE GaN Nosný plyn Růst Dusík
http://linked.open...ontrolniKodProRIV	[4A95F42B90C0]
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	6 (xsd:int)
http://linked.open...vavai/riv/projekt	Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications
http://linked.open...UplatneniVysledku	2005
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Hardtdegen, Hilde Cho, Yong Suk Kaluza, Nicoleta Steins, Roger Ahe, Martina von der
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
http://localhost/t...ganizacniJednotka	22310

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