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Description
| - We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices.
- We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. (en)
- Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech (cs)
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Title
| - Growth and properties of GaN and AlN layers on silver substrates
- Growth and properties of GaN and AlN layers on silver substrates (en)
- Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech (cs)
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skos:prefLabel
| - Growth and properties of GaN and AlN layers on silver substrates
- Growth and properties of GaN and AlN layers on silver substrates (en)
- Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech (cs)
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skos:notation
| - RIV/60461373:22310/05:00013775!RIV06-MSM-22310___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
| - P(GA104/03/0387), Z(MSM6046137302)
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/60461373:22310/05:00013775
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - GaN; AlN; Metal Substrate; Silver Substrate; MBE; Grown; Device; Schottky Diod (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Sofer, Zdeněk
- Stejskal, Josef
- Mikulics, Martin
- Marso, Michel
- Kočan, Martin
- Kordoš, Petr
- Javorka, Petr
- Lüth, Hans
- Rizzi, Angela
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http://linked.open...n/vavai/riv/zamer
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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