About: Growth and properties of GaN and AlN layers on silver substrates

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An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (~10-3 A/cm2). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. (en) Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech (cs)
Title	Growth and properties of GaN and AlN layers on silver substrates Growth and properties of GaN and AlN layers on silver substrates (en) Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech (cs)
skos:prefLabel	Growth and properties of GaN and AlN layers on silver substrates Growth and properties of GaN and AlN layers on silver substrates (en) Růst a vlastnosti GaN a AlN vrstev na stříbrných substrátech (cs)
skos:notation	RIV/60461373:22310/05:00013775!RIV06-MSM-22310___
http://linked.open.../vavai/riv/strany	212109
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA104/03/0387), Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	87
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Stejskal, Josef Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	522954
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/05:00013775
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	GaN; AlN; Metal Substrate; Silver Substrate; MBE; Grown; Device; Schottky Diod (en)
http://linked.open.../riv/klicoveSlovo	AlN Device GaN MBE Grown Metal Substrate Schottky Diod Silver Substrate
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[6CAEB77FB7E5]
http://linked.open...i/riv/nazevZdroje	Applied Physics Letters
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	2 (xsd:int)
http://linked.open...cetTvurcuVysledku	9 (xsd:int)
http://linked.open...vavai/riv/projekt	Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications
http://linked.open...UplatneniVysledku	2005
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Stejskal, Josef Mikulics, Martin Marso, Michel Kočan, Martin Kordoš, Petr Javorka, Petr Lüth, Hans Rizzi, Angela
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	0003-6951
number of pages	3 (xsd:int)
http://localhost/t...ganizacniJednotka	22310

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