About: Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides

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About: Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this paper we will first report on the real-time determination of wafer temperature during growth for transparent substrates. With this method we will then study the unintentional influence of growth parameter variations on the surface temperature. The effect on nitride growth optimization will be discussed. In this paper we will first report on the real-time determination of wafer temperature during growth for transparent substrates. With this method we will then study the unintentional influence of growth parameter variations on the surface temperature. The effect on nitride growth optimization will be discussed. (en) Využití určení teploty substrátu ke studiu náhodných parametrů ovlivňujících MOVPE růst nitridů třetí podskupiny. (cs)
Title	Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides Využití určení teploty substrátu ke studiu náhodných parametrů ovlivňujících MOVPE růst nitridů třetí podskupiny (cs) Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides (en)
skos:prefLabel	Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides Využití určení teploty substrátu ke studiu náhodných parametrů ovlivňujících MOVPE růst nitridů třetí podskupiny (cs) Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides (en)
skos:notation	RIV/60461373:22310/05:00013611!RIV06-MSM-22310___
http://linked.open.../vavai/riv/strany	2581
http://linked.open...avai/riv/aktivita	P Z
http://linked.open...avai/riv/aktivity	P(GA104/03/0387), Z(MSM6046137302)
http://linked.open...iv/cisloPeriodika	13
http://linked.open...vai/riv/dodaniDat	2006
http://linked.open...aciTvurceVysledku	Sofer, Zdeněk
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Vysoká škola chemicko-technologická v Praze / Fakulta chemické technologie
http://linked.open...dnocenehoVysledku	548123
http://linked.open...ai/riv/idVysledku	RIV/60461373:22310/05:00013611
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Growth; III-Nitride; GaN; Galium nitride; MOVPE; True Surface Temperature; Pyrometry; Emissivity (en)
http://linked.open.../riv/klicoveSlovo	Galium nitride III-Nitride Pyrometry True Surface Temperature MOVPE GaN Growth Emissivity
http://linked.open...odStatuVydavatele	DE - Spolková republika Německo
http://linked.open...ontrolniKodProRIV	[9C667D179C31]
http://linked.open...i/riv/nazevZdroje	Physica Status Solidi (b)
http://linked.open...in/vavai/riv/obor	CA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Chemical aspects of thin layer deposition of the AIII-nitrides in relation to electronic applications
http://linked.open...UplatneniVysledku	2005
http://linked.open...iv/tvurceVysledku	Sofer, Zdeněk Hardtdegen, Hilde Cho, Yong Suk Kaluza, Nicoleta Steins, Roger Haberland, Karl Zettler, J. T. Zorn, Michael
http://linked.open...n/vavai/riv/zamer	Preparation and research of functional materials and material technologies using micro- and nanoscopic methods
issn	0370-1972
number of pages	6 (xsd:int)
http://localhost/t...ganizacniJednotka	22310

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