About: Interpreting area of pinched memristor hysteresis loop

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://vavtest.unob.cz/registr
Description	It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity 'content’, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area below the v–i characteristic of the memristor: one is related to the power conditions and the other to the instantaneous state of the memristor memory. It is demonstrated for a memristor driven by the sinusoidal current that the power part of the content depends on the fundamental harmonic of the voltage, whereas the memory part of the content is given only by the higher harmonics of the voltage, and only by the even harmonics in the case of entirely closed loops. The analogous conclusions also hold for the voltage-controlled memristor. It is shown that the area of the pinched hysteresis loop of the current-controlled ideal memristor represents the quantity 'content’, which was introduced into the theory of nonlinear systems by Millar in 1951. Two parts of the content are identified which correspond to distinct parts of the area below the v–i characteristic of the memristor: one is related to the power conditions and the other to the instantaneous state of the memristor memory. It is demonstrated for a memristor driven by the sinusoidal current that the power part of the content depends on the fundamental harmonic of the voltage, whereas the memory part of the content is given only by the higher harmonics of the voltage, and only by the even harmonics in the case of entirely closed loops. The analogous conclusions also hold for the voltage-controlled memristor. (en)
Title	Interpreting area of pinched memristor hysteresis loop Interpreting area of pinched memristor hysteresis loop (en)
skos:prefLabel	Interpreting area of pinched memristor hysteresis loop Interpreting area of pinched memristor hysteresis loop (en)
skos:notation	RIV/60162694:G43__/14:00499396!RIV15-MO0-G43_____
http://linked.open...avai/riv/aktivita	I P
http://linked.open...avai/riv/aktivity	I, P(GA14-19865S)
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2015
http://linked.open...aciTvurceVysledku	Biolek, Dalibor
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Ministerstvo obrany / Univerzita obrany - Fakulta vojenských technologií Brno
http://linked.open...dnocenehoVysledku	22533
http://linked.open...ai/riv/idVysledku	RIV/60162694:G43__/14:00499396
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	Memristor; pinched hysteresis loop; content (en)
http://linked.open.../riv/klicoveSlovo	pinched hysteresis loop Memristor content
http://linked.open...odStatuVydavatele	GB - Spojené království Velké Británie a Severního Irska
http://linked.open...ontrolniKodProRIV	[F1AC676CDC9E]
http://linked.open...i/riv/nazevZdroje	Electronics Letters
http://linked.open...in/vavai/riv/obor	JA
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	3 (xsd:int)
http://linked.open...vavai/riv/projekt	Generalized higher-order elements
http://linked.open...UplatneniVysledku	2014
http://linked.open...v/svazekPeriodika	50
http://linked.open...iv/tvurceVysledku	Biolek, Dalibor Biolková, Viera Biolek, Zdeněk
http://linked.open...ain/vavai/riv/wos	000331141100013
issn	0013-5194
number of pages	2 (xsd:int)
http://localhost/t...ganizacniJednotka	G43

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