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Description
| - The scope of the present investigation is to make a clear contrast between the bandgap bowing characters of III-V and II-VI compound-semiconductor common-cation ternary alloys. For this aim, both the sp(3)s* tight-binding method, with the inclusion of spin-orbit coupling, and the full-potential linear augmented plane-wave technique are used to calculate the partial and total densities of states, the constituent ionicity, and the total electron charge density for the common-cation GaSbxAs1-x and CdSexTe1-x ternary alloys. The results show that the bowing is sensitive to competition between the anions for trapping/losing electric charges. The lack of this competition would result in complete absence of the bowing, as is the case for common-anion ternary alloys. In the common-cation ternary alloys studied herein, the bowing is found to be proportional to the electronegativity of the anions chi(anion) (i.e., the 6-valency anions are more electronegative than the 5-valency ones, and consequently the former
- The scope of the present investigation is to make a clear contrast between the bandgap bowing characters of III-V and II-VI compound-semiconductor common-cation ternary alloys. For this aim, both the sp(3)s* tight-binding method, with the inclusion of spin-orbit coupling, and the full-potential linear augmented plane-wave technique are used to calculate the partial and total densities of states, the constituent ionicity, and the total electron charge density for the common-cation GaSbxAs1-x and CdSexTe1-x ternary alloys. The results show that the bowing is sensitive to competition between the anions for trapping/losing electric charges. The lack of this competition would result in complete absence of the bowing, as is the case for common-anion ternary alloys. In the common-cation ternary alloys studied herein, the bowing is found to be proportional to the electronegativity of the anions chi(anion) (i.e., the 6-valency anions are more electronegative than the 5-valency ones, and consequently the former (en)
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Title
| - Comparison of Bowing Behaviors Between III-V and II-VI Common-Cation Semiconductor Ternary Alloys
- Comparison of Bowing Behaviors Between III-V and II-VI Common-Cation Semiconductor Ternary Alloys (en)
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skos:prefLabel
| - Comparison of Bowing Behaviors Between III-V and II-VI Common-Cation Semiconductor Ternary Alloys
- Comparison of Bowing Behaviors Between III-V and II-VI Common-Cation Semiconductor Ternary Alloys (en)
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skos:notation
| - RIV/60076658:12640/10:00012449!RIV11-MSM-12640___
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/60076658:12640/10:00012449
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - Electronic structure calculations; III-V semiconductors; II-VI semiconductors; photoluminescence (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
| - Journal of Electronic Materials
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...UplatneniVysledku
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http://linked.open...v/svazekPeriodika
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http://linked.open...iv/tvurceVysledku
| - Reshak, Ali Hussain
- Tit, Nacir
- Amrane, Noureddine
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http://linked.open...ain/vavai/riv/wos
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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