About: Electronic and optical properties of (AlxGa1-x)(1-y)MnyAs single crystal: a new candidate for integrated optical isolators and spintronics

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About: Electronic and optical properties of (AlxGa1-x)(1-y)MnyAs single crystal: a new candidate for integrated optical isolators and spintronics Goto Sponge NotDistinct Permalink

An Entity of Type : http://linked.opendata.cz/ontology/domain/vavai/Vysledek, within Data Space : linked.opendata.cz associated with source document(s)

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
rdfs:seeAlso	http://link.springer.com/article/10.1007%2Fs10853-012-6792-5
Description	We have explored the electronic and optical properties of cubic (AlxGa1-x)(1-y)MnyAs system using the FP-LAPW method. The unit cell has 64 atoms, so that one manganese (Mn) atom is placed in the position of gallium site, which corresponds to 3.125 % doping concentration with x = 12.5 %. Our calculations, using local density approximation + U (Hubbard parameter) scheme, predict that the ferromagnetic state for AlGaMnAs, with a magnetic moment of about 4.014 mu(B) per Mn dopant is more favorable. Despite its electronic properties being strongly affected by inducing small amounts of Mn substitutional atoms in the cationic sublattice of AlGaAs, (AlxGa1-x)(1-y)MnyAs possesses optical properties strictly less than those of AlxGa1-xAs, especially its optical conductivity at the peak 1.256 eV. The results indicate that AlGaMnAs may be a good candidate for optoelectronics when exploited in optical fiber networks, and it can still be of great interest because of its promising potential when used for spintronics. We have explored the electronic and optical properties of cubic (AlxGa1-x)(1-y)MnyAs system using the FP-LAPW method. The unit cell has 64 atoms, so that one manganese (Mn) atom is placed in the position of gallium site, which corresponds to 3.125 % doping concentration with x = 12.5 %. Our calculations, using local density approximation + U (Hubbard parameter) scheme, predict that the ferromagnetic state for AlGaMnAs, with a magnetic moment of about 4.014 mu(B) per Mn dopant is more favorable. Despite its electronic properties being strongly affected by inducing small amounts of Mn substitutional atoms in the cationic sublattice of AlGaAs, (AlxGa1-x)(1-y)MnyAs possesses optical properties strictly less than those of AlxGa1-xAs, especially its optical conductivity at the peak 1.256 eV. The results indicate that AlGaMnAs may be a good candidate for optoelectronics when exploited in optical fiber networks, and it can still be of great interest because of its promising potential when used for spintronics. (en)
Title	Electronic and optical properties of (AlxGa1-x)(1-y)MnyAs single crystal: a new candidate for integrated optical isolators and spintronics Electronic and optical properties of (AlxGa1-x)(1-y)MnyAs single crystal: a new candidate for integrated optical isolators and spintronics (en)
skos:prefLabel	Electronic and optical properties of (AlxGa1-x)(1-y)MnyAs single crystal: a new candidate for integrated optical isolators and spintronics Electronic and optical properties of (AlxGa1-x)(1-y)MnyAs single crystal: a new candidate for integrated optical isolators and spintronics (en)
skos:notation	RIV/60076658:12520/13:43885144!RIV14-MSM-12520___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/01.0024)
http://linked.open...iv/cisloPeriodika	2
http://linked.open...vai/riv/dodaniDat	2014
http://linked.open...aciTvurceVysledku	Reshak, Ali Hussain
http://linked.open.../riv/druhVysledku	J - Článek v odborném periodiku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Jihočeská univerzita v Českých Budějovicích / Fakulta rybářství a ochrany vod
http://linked.open...dnocenehoVysledku	72417
http://linked.open...ai/riv/idVysledku	RIV/60076658:12520/13:43885144
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	layer; spectra; (ga; gaas; mnas; mn)as; magnetic semiconductor; ferromagnetic semiconductors; wave-guide isolator (en)
http://linked.open.../riv/klicoveSlovo	(ga magnetic semiconductor mn)as mnas wave-guide isolator ferromagnetic semiconductors layer gaas spectra
http://linked.open...odStatuVydavatele	US - Spojené státy americké
http://linked.open...ontrolniKodProRIV	[111A1C4BD30D]
http://linked.open...i/riv/nazevZdroje	JOURNAL OF MATERIALS SCIENCE
http://linked.open...in/vavai/riv/obor	BO
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	South Bohemian Research Center of Aquaculture and Biodiversity of Hydrocenoses
http://linked.open...UplatneniVysledku	2013
http://linked.open...v/svazekPeriodika	48
http://linked.open...iv/tvurceVysledku	Al-Douri, Y. Reshak, Ali Hussain Abid, H. Merabet, B.
http://linked.open...ain/vavai/riv/wos	000312903400021
issn	0022-2461
number of pages	7 (xsd:int)
http://bibframe.org/vocab/doi	10.1007/s10853-012-6792-5
http://localhost/t...ganizacniJednotka	12520

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