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  • The structural, elastic and electronic properties of NiTiSn and CoVSn half-Heusler compounds have been calculated using the full-potential linear muffin-tin orbital (FP-LMTO) method. The computed equilibrium lattice constants are in excellent agreement with the available experimental and theoretical data. The elastic constants C-ij are calculated using the total energy variation with strain technique. The polycrystalline elastic moduli (namely: the shear modulus, Young's modulus, Poisson's ratio, Lame's coefficients, sound velocities and the Debye temperature) were derived from the obtained single-crystal elastic constants. The ductility mechanism for the studied compounds is discussed via the elastic constants C-ij and their related parameters. The electronic band structure calculations show that the conduction band minimum (CBM) is located at the X point for both compounds, whereas the valence band maximum (VBM) is located at the Gamma point for NiTiSn and at the L point for CoVSn, resulting in indirect energy band gaps of 0.46 and 0.75 eV for NiTiSn and CoVSn, respectively. The pressure and volume dependences of the energy band gaps have been calculated.
  • The structural, elastic and electronic properties of NiTiSn and CoVSn half-Heusler compounds have been calculated using the full-potential linear muffin-tin orbital (FP-LMTO) method. The computed equilibrium lattice constants are in excellent agreement with the available experimental and theoretical data. The elastic constants C-ij are calculated using the total energy variation with strain technique. The polycrystalline elastic moduli (namely: the shear modulus, Young's modulus, Poisson's ratio, Lame's coefficients, sound velocities and the Debye temperature) were derived from the obtained single-crystal elastic constants. The ductility mechanism for the studied compounds is discussed via the elastic constants C-ij and their related parameters. The electronic band structure calculations show that the conduction band minimum (CBM) is located at the X point for both compounds, whereas the valence band maximum (VBM) is located at the Gamma point for NiTiSn and at the L point for CoVSn, resulting in indirect energy band gaps of 0.46 and 0.75 eV for NiTiSn and CoVSn, respectively. The pressure and volume dependences of the energy band gaps have been calculated. (en)
Title
  • Theoretical investigations of NiTiSn and CoVSn compounds
  • Theoretical investigations of NiTiSn and CoVSn compounds (en)
skos:prefLabel
  • Theoretical investigations of NiTiSn and CoVSn compounds
  • Theoretical investigations of NiTiSn and CoVSn compounds (en)
skos:notation
  • RIV/60076658:12520/12:43883652!RIV13-MSM-12520___
http://linked.open...avai/riv/aktivita
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  • P(ED2.1.00/01.0024)
http://linked.open...iv/cisloPeriodika
  • 8
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
  • Reshak, Ali Hussain
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  • 174200
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  • RIV/60076658:12520/12:43883652
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  • Electronic structure; Ab initio calculations; SB; NI; ZR; Z=SN; ENERGIES; PHASES; PRESSURE; FINITE STRAIN; SEMI-HEUSLER COMPOUNDS (en)
http://linked.open.../riv/klicoveSlovo
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  • US - Spojené státy americké
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  • [74BB1A5E3729]
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  • JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
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http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 73
http://linked.open...iv/tvurceVysledku
  • Reshak, Ali Hussain
  • Khenata, R.
  • Ahmed, R.
  • Rabah, M.
  • Rached, D.
  • Bin Omran, S.
  • Merabet, M.
  • Hichour, M.
http://linked.open...ain/vavai/riv/wos
  • 000304632100001
issn
  • 0022-3697
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.jpcs.2012.03.014
http://localhost/t...ganizacniJednotka
  • 12520
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