About: Electronic structure and dispersion of optical function of tantalum nitride as a visible light photo-catalyst     Goto   Sponge   NotDistinct   Permalink

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  • Tantalum nitride Ta3N5, as a visible light photocatalyst is studied using the state-of-the-art full potential linear augmented plane wave (FPLAPW) method in a scalar relativistic version. The calculated energy band gap values are vary between 1.1 eV (LDA), 1.2 eV (GGA), 1.5 eV (EVGGA) and 2.1 eV (mBJ). The band gap obtained using mBJ show excellent agreement with the experimental value 2.1 eV than the previous calculation. Thus mBJ potential is applied to investigate the ground state properties of tantalum nitride. The conduction band minimum is located at Y point of BZ, while the valence band maximum is located at the center of BZ indicates that the tantalum nitride is an indirect band gap semiconductor. The calculated electron charge density contours show that covalent bond exist between Ta and N atoms. The optical properties are discussed in details to seek deeper insight for the electronic structure. The calculated uniaxial anisotropy of Ta3N5, indicate a strong anisotropy of the optical dielectric functions. The absorption spectrum show that the absorption occurs in the visible region which makes Ta3N5 as an active photocatalyst under visible light irradiation. Ta3N5 crystal almost behaves as transparent in the higher wavelength light.
  • Tantalum nitride Ta3N5, as a visible light photocatalyst is studied using the state-of-the-art full potential linear augmented plane wave (FPLAPW) method in a scalar relativistic version. The calculated energy band gap values are vary between 1.1 eV (LDA), 1.2 eV (GGA), 1.5 eV (EVGGA) and 2.1 eV (mBJ). The band gap obtained using mBJ show excellent agreement with the experimental value 2.1 eV than the previous calculation. Thus mBJ potential is applied to investigate the ground state properties of tantalum nitride. The conduction band minimum is located at Y point of BZ, while the valence band maximum is located at the center of BZ indicates that the tantalum nitride is an indirect band gap semiconductor. The calculated electron charge density contours show that covalent bond exist between Ta and N atoms. The optical properties are discussed in details to seek deeper insight for the electronic structure. The calculated uniaxial anisotropy of Ta3N5, indicate a strong anisotropy of the optical dielectric functions. The absorption spectrum show that the absorption occurs in the visible region which makes Ta3N5 as an active photocatalyst under visible light irradiation. Ta3N5 crystal almost behaves as transparent in the higher wavelength light. (en)
Title
  • Electronic structure and dispersion of optical function of tantalum nitride as a visible light photo-catalyst
  • Electronic structure and dispersion of optical function of tantalum nitride as a visible light photo-catalyst (en)
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  • Electronic structure and dispersion of optical function of tantalum nitride as a visible light photo-catalyst
  • Electronic structure and dispersion of optical function of tantalum nitride as a visible light photo-catalyst (en)
skos:notation
  • RIV/49777513:23640/14:43924003!RIV15-MSM-23640___
http://linked.open...avai/riv/aktivita
http://linked.open...avai/riv/aktivity
  • P(ED2.1.00/03.0088)
http://linked.open...iv/cisloPeriodika
  • 15 června 2014
http://linked.open...vai/riv/dodaniDat
http://linked.open...aciTvurceVysledku
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  • 14208
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  • RIV/49777513:23640/14:43924003
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  • Ta3N5; DFT; Visible light irradiation; Photocatalyst (en)
http://linked.open.../riv/klicoveSlovo
http://linked.open...odStatuVydavatele
  • NL - Nizozemsko
http://linked.open...ontrolniKodProRIV
  • [370278F10FC7]
http://linked.open...i/riv/nazevZdroje
  • Computational Materials Science
http://linked.open...in/vavai/riv/obor
http://linked.open...ichTvurcuVysledku
http://linked.open...cetTvurcuVysledku
http://linked.open...vavai/riv/projekt
http://linked.open...UplatneniVysledku
http://linked.open...v/svazekPeriodika
  • 89
http://linked.open...iv/tvurceVysledku
  • Al-Jaary, Ali H. Reshak
http://linked.open...ain/vavai/riv/wos
  • 000335900300008
issn
  • 0927-0256
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.commatsci.2014.03.035
http://localhost/t...ganizacniJednotka
  • 23640
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