About: Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications

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About: Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 °C to initialize recrystallization and formation of Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain and disordered amorphous regions. The XRD study shows the presence of nanocrystallites of silicon and their size can be precisely controlled by adjusting the thickness of a-Si:H layers. In this paper, we used thermal annealing for fabrication size controlled silicon nanostructures from amorphous a-Si:H/SiO2 multilayers. A series of multilayers were deposited by PECVD using SiH4 and N2O as precursor gases. Films composed of alternating uniformly thick (20, 15, 10 and 5 nm) sublayers of a-Si:H and SiO2 were prepared on Corning glass and Si(100) substrate. Subsequently, all as-deposited multilayered films were annealed in vacuum up to 1100 °C to initialize recrystallization and formation of Si nanograins. The influence of the annealing temperature on the structural and optical properties of films were systematically studied by using XRD, FT-IR, Raman, UV-Vis spectrophotometer and ellipsometry. In FT-IR spectra, the shift of the Si-O stretching vibration to higher wavenumbers after annealing indicates phase separation. The disappearance of the hydrogen related bonds indicates the hydrogen effusion. Raman scattering spectra revealed mixed states of small crystalline grain and disordered amorphous regions. The XRD study shows the presence of nanocrystallites of silicon and their size can be precisely controlled by adjusting the thickness of a-Si:H layers. (en)
Title	Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications (en)
skos:prefLabel	Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications Investigation of properties of Si-based multilayers prepared by PECVD for photovoltaic applications (en)
skos:notation	RIV/49777513:23640/12:43916611!RIV13-MSM-23640___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(ED2.1.00/03.0088)
http://linked.open...vai/riv/dodaniDat	2013
http://linked.open...aciTvurceVysledku	Netrvalová, Marie Šutta, Pavol Calta, Pavel Prušáková, Lucie
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	142920
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/12:43916611
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	XRD; optical properties; annealing; Si nanostructures; PECVD; a-Si:H/SiO2 multilayers (en)
http://linked.open.../riv/klicoveSlovo	Si nanostructures a-Si:H/SiO2 multilayers PECVD XRD annealing optical properties
http://linked.open...ontrolniKodProRIV	[E7E72233C4A9]
http://linked.open...v/mistoKonaniAkce	Florence, Italie
http://linked.open...i/riv/mistoVydani	Bratislava
http://linked.open...i/riv/nazevZdroje	Progress in Applied Surface, Inteface and Thin Film Science 2012, SURFINT -SREN III
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	4 (xsd:int)
http://linked.open...cetTvurcuVysledku	4 (xsd:int)
http://linked.open...vavai/riv/projekt	Centre of the New Technologies and Materials
http://linked.open...UplatneniVysledku	2012
http://linked.open...iv/tvurceVysledku	Netrvalová, Marie Šutta, Pavol Prušáková, Lucie Calta, Pavel
http://linked.open...vavai/riv/typAkce	WRD - Světová
http://linked.open.../riv/zahajeniAkce	2012-05-14 (xsd:date)
number of pages	2 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Univerzita Komenského v Bratislave
https://schema.org/isbn	978-80-223-3212-5
http://localhost/t...ganizacniJednotka	23640

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