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  • The paper deals with the pulsed laser deposition technology and in this special case the substrate was cooled at cryogenic temperature by liquid nitrogen during the deposition process. This approach is proper for growth of highly disordered structures with new physical properties and zinc oxide was applied as experimental example for demonstration. Films were deposited on different substrates: Si (100) and sapphire (0001) and subsequently annealed at different temperatures (200-800 °C). Their properties were investigated by various analytical methods. X-ray diffraction (XRD) proved fully amorphous structure of as-grown ZnO layers which were cooled during the deposition process. Annealing of these amorphous layers changed their properties according to temperature level and annealing time. XRD and scanning electron microscopy (SEM) revealed recrystallized structure.
  • The paper deals with the pulsed laser deposition technology and in this special case the substrate was cooled at cryogenic temperature by liquid nitrogen during the deposition process. This approach is proper for growth of highly disordered structures with new physical properties and zinc oxide was applied as experimental example for demonstration. Films were deposited on different substrates: Si (100) and sapphire (0001) and subsequently annealed at different temperatures (200-800 °C). Their properties were investigated by various analytical methods. X-ray diffraction (XRD) proved fully amorphous structure of as-grown ZnO layers which were cooled during the deposition process. Annealing of these amorphous layers changed their properties according to temperature level and annealing time. XRD and scanning electron microscopy (SEM) revealed recrystallized structure. (en)
Title
  • Cryogenic pulsed laser deposition of ZnO
  • Cryogenic pulsed laser deposition of ZnO (en)
skos:prefLabel
  • Cryogenic pulsed laser deposition of ZnO
  • Cryogenic pulsed laser deposition of ZnO (en)
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  • RIV/49777513:23640/12:43897330!RIV13-MSM-23640___
http://linked.open...avai/riv/aktivita
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  • P(1M06031), P(ED2.1.00/03.0088)
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  • 6
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  • 129110
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  • RIV/49777513:23640/12:43897330
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  • Zinc oxide; Recrystallization; Amorphous structure; Cryogenic temperature; Pulsed laser deposition (en)
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  • GB - Spojené království Velké Británie a Severního Irska
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  • [EBD2AF913EDD]
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  • Vacuum
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  • 86
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  • Bruncko, Jaroslav
  • Michalka, Miroslav
  • Netrvalová, Marie
  • Vincze, Andrej
  • Šutta, Pavol
  • Uherek, František
issn
  • 0042-207X
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.vacuum.2011.07.033
http://localhost/t...ganizacniJednotka
  • 23640
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