About: Annealing and recrystallization of amorphous ZnO thin ?lms deposited under cryogenic conditions by pulsed laser deposition     Goto   Sponge   NotDistinct   Permalink

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  • This article deals with the annealing of amorphous ZnO thin films prepared by pulsed laser deposition (PLD) under cryogenic conditions. The substrate holder was cooled by liquid nitrogen. X-ray diffraction analysis evidenced that as-deposited films had amorphous structures: analysis by scanning electron microscopy (SEM) revealed their fine grained surface and inner structure. Annealing at temperatures in the range of 200 - 800 °C resulted in a transition in the thin film crystal structure from amorphous to polycrystalline. Various properties of the ZnO films were found depending on the recrystallization temperature. In depth investigations employing SEM, X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy provided comparisons of the recrystallizations of undoped ZnO thin films during the phase transition processes from amorphous to hexagonal wurtzite structures.
  • This article deals with the annealing of amorphous ZnO thin films prepared by pulsed laser deposition (PLD) under cryogenic conditions. The substrate holder was cooled by liquid nitrogen. X-ray diffraction analysis evidenced that as-deposited films had amorphous structures: analysis by scanning electron microscopy (SEM) revealed their fine grained surface and inner structure. Annealing at temperatures in the range of 200 - 800 °C resulted in a transition in the thin film crystal structure from amorphous to polycrystalline. Various properties of the ZnO films were found depending on the recrystallization temperature. In depth investigations employing SEM, X-ray diffraction, atomic force microscopy and secondary ion mass spectroscopy provided comparisons of the recrystallizations of undoped ZnO thin films during the phase transition processes from amorphous to hexagonal wurtzite structures. (en)
Title
  • Annealing and recrystallization of amorphous ZnO thin ?lms deposited under cryogenic conditions by pulsed laser deposition
  • Annealing and recrystallization of amorphous ZnO thin ?lms deposited under cryogenic conditions by pulsed laser deposition (en)
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  • Annealing and recrystallization of amorphous ZnO thin ?lms deposited under cryogenic conditions by pulsed laser deposition
  • Annealing and recrystallization of amorphous ZnO thin ?lms deposited under cryogenic conditions by pulsed laser deposition (en)
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  • RIV/49777513:23640/11:43898563!RIV12-MSM-23640___
http://linked.open...avai/riv/aktivita
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  • P(1M06031), P(ED2.1.00/03.0088)
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  • 2
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  • 186322
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  • RIV/49777513:23640/11:43898563
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  • cryogenic temperature; recrystallization; annealing; pulsed laser deposition; amorphous structure; Zinc oxide (en)
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  • NL - Nizozemsko
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  • [887D51909A19]
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  • Thin Solid Films
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  • 520
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  • Bruncko, Jaroslav
  • Haško, Daniel
  • Michalka, Miroslav
  • Netrvalová, Marie
  • Vincze, Andrej
  • Šutta, Pavol
issn
  • 0040-6090
number of pages
http://bibframe.org/vocab/doi
  • 10.1016/j.tsf.2011.04.202
http://localhost/t...ganizacniJednotka
  • 23640
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