About: Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements

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About: Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements Goto Sponge NotDistinct Permalink

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rdf:type	skos:Concept http://linked.opendata.cz/ontology/domain/vavai/Vysledek
Description	The opportunity to put together low cost potential and high performance was the main driving force for the researchers to focus their attention on the solar cells with a-Si:H/c-Si hetero-junction. To fully utilize the potential of this technology, the study and optimization of hetero-junction was identified as the most important issue. In our previous numerical study we have shown that particularly the defect density and band offset at the hetero-junction have major impact on the solar cell performance. The opportunity to put together low cost potential and high performance was the main driving force for the researchers to focus their attention on the solar cells with a-Si:H/c-Si hetero-junction. To fully utilize the potential of this technology, the study and optimization of hetero-junction was identified as the most important issue. In our previous numerical study we have shown that particularly the defect density and band offset at the hetero-junction have major impact on the solar cell performance. (en)
Title	Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements (en)
skos:prefLabel	Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements Determination of the conduction band offset in the a-Si:H/c-Si heterojunction structures from coplanar temperature current-voltage measurements (en)
skos:notation	RIV/49777513:23640/11:43897230!RIV12-MSM-23640___
http://linked.open...avai/riv/aktivita	P
http://linked.open...avai/riv/aktivity	P(1M06031), P(ED2.1.00/03.0088)
http://linked.open...vai/riv/dodaniDat	2012
http://linked.open...aciTvurceVysledku	Prušáková, Lucie
http://linked.open.../riv/druhVysledku	D - Článek ve sborníku
http://linked.open...iv/duvernostUdaju	S - Úplné a pravdivé údaje nepodléhající ochraně podle zvláštních právních předpisů
http://linked.open...titaPredkladatele	Západočeská univerzita v Plzni / Nové technologie - výzkumné centrum
http://linked.open...dnocenehoVysledku	193906
http://linked.open...ai/riv/idVysledku	RIV/49777513:23640/11:43897230
http://linked.open...riv/jazykVysledku	eng - angličtina
http://linked.open.../riv/klicovaSlova	a-Si:H/c-Si structures; hetero-junction (en)
http://linked.open.../riv/klicoveSlovo	a-Si:H/c-Si structures hetero-junction
http://linked.open...ontrolniKodProRIV	[42CB422593DC]
http://linked.open...v/mistoKonaniAkce	Spa Nový Smokovec, High Tatras, Slovakia
http://linked.open...i/riv/mistoVydani	Žilina
http://linked.open...i/riv/nazevZdroje	Proceedings of the 17th International Conference on Applied Physics of Condensed Matter
http://linked.open...in/vavai/riv/obor	BM
http://linked.open...ichTvurcuVysledku	1 (xsd:int)
http://linked.open...cetTvurcuVysledku	8 (xsd:int)
http://linked.open...vavai/riv/projekt	Materials and components for environment protection Centre of the New Technologies and Materials
http://linked.open...UplatneniVysledku	2011
http://linked.open...iv/tvurceVysledku	Harmatha, L. Jakabovič, J. Kotlár, M. Matay, L. Mikolášek, M. Prušáková, Lucie Vanko, G. Řeháček, V.
http://linked.open...vavai/riv/typAkce	EUR - Evropská
http://linked.open.../riv/zahajeniAkce	2011-06-22 (xsd:date)
number of pages	4 (xsd:int)
http://purl.org/ne...btex#hasPublisher	Univerzita v Žilině
https://schema.org/isbn	978-80-554-0386-1
http://localhost/t...ganizacniJednotka	23640

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