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Description
| - V tomto příspěvku je prezentován vztah mezi parametry reaktivního RF diodového naprašování ze ZnO terče a krystalickými, elektrickými a optickými vlastnostmi n-/p-typu tenkých vrstev ZnO. Vlastnosti tenkých vrstev ZnO závisí na RF výkonu, substrátu, teplotě a částečně na pracovním plynu složeného z Ar/O2 a Ar/N2. (cs)
- We present the relationship between parameters of reactive RF diode sputtering from a zinc oxide (ZnO) target and the crystalline, electrical and optical properties of n-/p-type ZnO thin films depended on RF power, substrate temperature and, particularly, on working gas mixtures of Ar/O2 and of Ar/N2. Sputtering in Ar+O2 working gas (up to 75% of O2)improved the structure of an n-type ZnO thin film, from fibrous ZnO grains to colummar crystallites, both preferentially oriented along the c-axis normally to the substrate (<002> direction). These films had good piezoelektric properties but also high resistivity (ρ≈10E3 Ωcm). ZnO:N p-type films exhibited nanograin structure with preferential <002> orientation at 25% N2 and <002> orientation for higher N2 content.
- We present the relationship between parameters of reactive RF diode sputtering from a zinc oxide (ZnO) target and the crystalline, electrical and optical properties of n-/p-type ZnO thin films depended on RF power, substrate temperature and, particularly, on working gas mixtures of Ar/O2 and of Ar/N2. Sputtering in Ar+O2 working gas (up to 75% of O2)improved the structure of an n-type ZnO thin film, from fibrous ZnO grains to colummar crystallites, both preferentially oriented along the c-axis normally to the substrate (<002> direction). These films had good piezoelektric properties but also high resistivity (ρ≈10E3 Ωcm). ZnO:N p-type films exhibited nanograin structure with preferential <002> orientation at 25% N2 and <002> orientation for higher N2 content. (en)
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Title
| - RF diode reactive sputtering of n- and p-type zinc oxide thin films
- RF diode reactive sputtering of n- and p-type zinc oxide thin films (en)
- RF diodové naprašováni tenkých vrstev oxidu zinku n- a p-typu (cs)
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skos:prefLabel
| - RF diode reactive sputtering of n- and p-type zinc oxide thin films
- RF diode reactive sputtering of n- and p-type zinc oxide thin films (en)
- RF diodové naprašováni tenkých vrstev oxidu zinku n- a p-typu (cs)
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skos:notation
| - RIV/49777513:23640/07:00000022!RIV08-MSM-23640___
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http://linked.open.../vavai/riv/strany
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http://linked.open...avai/riv/aktivita
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http://linked.open...avai/riv/aktivity
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http://linked.open...iv/cisloPeriodika
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http://linked.open...vai/riv/dodaniDat
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http://linked.open...aciTvurceVysledku
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http://linked.open.../riv/druhVysledku
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http://linked.open...iv/duvernostUdaju
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http://linked.open...titaPredkladatele
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http://linked.open...dnocenehoVysledku
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http://linked.open...ai/riv/idVysledku
| - RIV/49777513:23640/07:00000022
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http://linked.open...riv/jazykVysledku
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http://linked.open.../riv/klicovaSlova
| - thin film; zinc oxide; RF sputtering (en)
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http://linked.open.../riv/klicoveSlovo
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http://linked.open...odStatuVydavatele
| - US - Spojené státy americké
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http://linked.open...ontrolniKodProRIV
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http://linked.open...i/riv/nazevZdroje
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http://linked.open...in/vavai/riv/obor
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http://linked.open...ichTvurcuVysledku
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http://linked.open...cetTvurcuVysledku
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http://linked.open...vavai/riv/projekt
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http://linked.open...UplatneniVysledku
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http://linked.open...iv/tvurceVysledku
| - Novotný, Ivan
- Šutta, Pavol
- Tvarožek, Vladimír
- Kováč, J.
- Vincze, A.
- Shtereva, K.
- Srnánek, R.
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issn
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number of pages
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http://localhost/t...ganizacniJednotka
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